@inproceedings{10ad03aba89f46c89ccffdad60abb530,
title = "An analysis of the read margin and power consumption of crossbar ReRAM arrays",
abstract = "The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application.",
keywords = "bias scheme, crossbar array, power consumption, read margin, Resistive Random Access Memory (ReRAM), selector",
author = "Sujin Choi and Wookyung Sun and Hyein Lim and Hyungsoon Shin",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 35th IEEE Region 10 Conference, TENCON 2015 ; Conference date: 01-11-2015 Through 04-11-2015",
year = "2016",
month = jan,
day = "5",
doi = "10.1109/TENCON.2015.7372853",
language = "English",
series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "TENCON 2015 - 2015 IEEE Region 10 Conference",
}