An analysis of the read margin and power consumption of crossbar ReRAM arrays

Sujin Choi; Wookyung Sun; Hyein Lim; Hyungsoon Shin

doi:10.1109/TENCON.2015.7372853

An analysis of the read margin and power consumption of crossbar ReRAM arrays

Sujin Choi, Wookyung Sun, Hyein Lim, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application.

Original language	English
Title of host publication	TENCON 2015 - 2015 IEEE Region 10 Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479986415
DOIs	https://doi.org/10.1109/TENCON.2015.7372853
State	Published - 5 Jan 2016
Event	35th IEEE Region 10 Conference, TENCON 2015 - Macau, Macao Duration: 1 Nov 2015 → 4 Nov 2015

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON
Volume	2016-January
ISSN (Print)	2159-3442
ISSN (Electronic)	2159-3450

Conference

Conference	35th IEEE Region 10 Conference, TENCON 2015
Country/Territory	Macao
City	Macau
Period	1/11/15 → 4/11/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Resistive Random Access Memory (ReRAM)
bias scheme
crossbar array
power consumption
read margin
selector

Access to Document

10.1109/TENCON.2015.7372853

Cite this

Choi, S., Sun, W., Lim, H., & Shin, H. (2016). An analysis of the read margin and power consumption of crossbar ReRAM arrays. In TENCON 2015 - 2015 IEEE Region 10 Conference Article 7372853 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2016-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TENCON.2015.7372853

@inproceedings{10ad03aba89f46c89ccffdad60abb530,

title = "An analysis of the read margin and power consumption of crossbar ReRAM arrays",

abstract = "The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application.",

keywords = "Resistive Random Access Memory (ReRAM), bias scheme, crossbar array, power consumption, read margin, selector",

author = "Sujin Choi and Wookyung Sun and Hyein Lim and Hyungsoon Shin",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 35th IEEE Region 10 Conference, TENCON 2015 ; Conference date: 01-11-2015 Through 04-11-2015",

year = "2016",

month = jan,

day = "5",

doi = "10.1109/TENCON.2015.7372853",

language = "English",

series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "TENCON 2015 - 2015 IEEE Region 10 Conference",

}

Choi, S, Sun, W, Lim, H & Shin, H 2016, An analysis of the read margin and power consumption of crossbar ReRAM arrays. in TENCON 2015 - 2015 IEEE Region 10 Conference., 7372853, IEEE Region 10 Annual International Conference, Proceedings/TENCON, vol. 2016-January, Institute of Electrical and Electronics Engineers Inc., 35th IEEE Region 10 Conference, TENCON 2015, Macau, Macao, 1/11/15. https://doi.org/10.1109/TENCON.2015.7372853

An analysis of the read margin and power consumption of crossbar ReRAM arrays. / Choi, Sujin; Sun, Wookyung; Lim, Hyein et al.
TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 2016. 7372853 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2016-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An analysis of the read margin and power consumption of crossbar ReRAM arrays

AU - Choi, Sujin

AU - Sun, Wookyung

AU - Lim, Hyein

AU - Shin, Hyungsoon

PY - 2016/1/5

Y1 - 2016/1/5

N2 - The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application.

AB - The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application.

KW - Resistive Random Access Memory (ReRAM)

KW - bias scheme

KW - crossbar array

KW - power consumption

KW - read margin

KW - selector

UR - http://www.scopus.com/inward/record.url?scp=84962136075&partnerID=8YFLogxK

U2 - 10.1109/TENCON.2015.7372853

DO - 10.1109/TENCON.2015.7372853

M3 - Conference contribution

AN - SCOPUS:84962136075

T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON

BT - TENCON 2015 - 2015 IEEE Region 10 Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 35th IEEE Region 10 Conference, TENCON 2015

Y2 - 1 November 2015 through 4 November 2015

ER -

An analysis of the read margin and power consumption of crossbar ReRAM arrays

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this