An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures

Physics

• Simulation 100%
• Field Effect Transistor 100%
• Capacitance-Voltage Characteristics 100%
• Technology 57%
• Independent Variables 28%
• Behavior 14%
• Electric Potential 14%
• Capacitance 14%
• Model 14%
• Insulators 14%
• Substrates 14%
• Volume 14%
• Silicon 14%
• Computer Aided Design 14%

Material Science

• Capacitance 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Field Effect Transistor 50%
• Metal Oxide 50%
• Oxide Semiconductor 50%
• Semiconductor Structure 50%
• Material 33%
• Devices 33%
• Characterization 16%
• Silicon on Insulator 16%