TY - JOUR
T1 - An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures
AU - Yu, Eunseon
AU - Cho, Seongjae
AU - Park, Byung Gook
N1 - Funding Information:
This work was supported by the Gachon University Research Fund of 2016 (GCU-2016-0197) and also supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning (MSIP) as a Global Frontier Project (CISS-2012M3A6A6054186).
Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/9/15
Y1 - 2017/9/15
N2 - An essential and important method for physical and electrical characterization of a metal-oxide-semiconductor (MOS) structure is the capacitance-voltage (C-V) measurement. Judging from the C-V characteristics of a MOS structure, we are allowed to predict the DC and AC behaviors of the field-effect transistor and extract a set of primary parameters. The MOS field-effect transistor (MOSFET) technology has evolved to enhance the gate controllability over the channel in order for effectively suppressing the short-channel effects (SCEs) unwantedly taking place as device scaling progresses. For the goal, numerous novel structures have been suggested for the advanced MOSFET devices. However, the C-V characteristics of such novel MOS structures have not been seldom studied in depth. In this work, we report the C-V characteristics of ultra-thin-body (UTB) MOSFETs on the bulk Si and silicon-on-insulator (SOI) substrates by rigorous technology computer-aided design (TCAD) simulation. For higher credibility and accuracy, quantum-mechanical models are activated and empirical material parameters are employed from the existing literature. The MOSFET structure and the material configurations are schemed referring advanced logic technology suggested by the most recent technology roadmap. The C-V characteristics of UTB MOSFETs having a floating body with extremely small volume are closely investigated.
AB - An essential and important method for physical and electrical characterization of a metal-oxide-semiconductor (MOS) structure is the capacitance-voltage (C-V) measurement. Judging from the C-V characteristics of a MOS structure, we are allowed to predict the DC and AC behaviors of the field-effect transistor and extract a set of primary parameters. The MOS field-effect transistor (MOSFET) technology has evolved to enhance the gate controllability over the channel in order for effectively suppressing the short-channel effects (SCEs) unwantedly taking place as device scaling progresses. For the goal, numerous novel structures have been suggested for the advanced MOSFET devices. However, the C-V characteristics of such novel MOS structures have not been seldom studied in depth. In this work, we report the C-V characteristics of ultra-thin-body (UTB) MOSFETs on the bulk Si and silicon-on-insulator (SOI) substrates by rigorous technology computer-aided design (TCAD) simulation. For higher credibility and accuracy, quantum-mechanical models are activated and empirical material parameters are employed from the existing literature. The MOSFET structure and the material configurations are schemed referring advanced logic technology suggested by the most recent technology roadmap. The C-V characteristics of UTB MOSFETs having a floating body with extremely small volume are closely investigated.
KW - Capacitance-voltage (C-V) characteristics
KW - Device physics
KW - Floating-body MOSFET
KW - Metal-oxide-semiconductor (MOS) capacitor
KW - Silicon-on-insulator (SOI)
KW - Ultra-thin body (UTB)
UR - http://www.scopus.com/inward/record.url?scp=85025064992&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2017.06.048
DO - 10.1016/j.physb.2017.06.048
M3 - Article
AN - SCOPUS:85025064992
SN - 0921-4526
VL - 521
SP - 305
EP - 311
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -