An 8.5-Gb/s fully integrated CMOS optoelectronic receiver using slope-detection adaptive equalizer

Dongmyung Lee; Jungwon Han; Gunhee Han; Sung Min Park

doi:10.1109/JSSC.2010.2077050

An 8.5-Gb/s fully integrated CMOS optoelectronic receiver using slope-detection adaptive equalizer

Dongmyung Lee, Jungwon Han, Gunhee Han, Sung Min Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

An 8.5-Gb/s single-chip optoelectronic integrated circuit (OEIC) for short-distance optical communications is realized in a 0.13- μm CMOS process. The OEIC consists of an on-chip silicon photodiode, a transimpedance amplifier with modified regulated cascode input configuration, an adaptive equalizer based upon slope-detection algorithm, and a limiting amplifier with merged negative impedance circuits. The proposed slope-detection adaptive equalizer compensates the limited bandwidth and the temperature variation of the integrated silicon photodiode. Measured results demonstrate 120-dB Ω transimpedance gain, 5.9-GHz bandwidth, - 3.2-dBm optical sensitivity for 10 ^-12 BER, and 47-mW power dissipation from a single 1.5-V supply. The OEIC chip core occupies the area of 0.1 mm².

Original language	English
Article number	5599945
Pages (from-to)	2861-2873
Number of pages	13
Journal	IEEE Journal of Solid-State Circuits
Volume	45
Issue number	12
DOIs	https://doi.org/10.1109/JSSC.2010.2077050
State	Published - Dec 2010

Keywords

Adaptive equalizers
limiting amplifiers
negative impedance compensation
optoelectronic integrated circuits
silicon photodiodes
slope detection
transimpedance amplifiers

Access to Document

10.1109/JSSC.2010.2077050

Cite this

@article{ee7be2a565c8423f8083bca858c4a925,

title = "An 8.5-Gb/s fully integrated CMOS optoelectronic receiver using slope-detection adaptive equalizer",

abstract = "An 8.5-Gb/s single-chip optoelectronic integrated circuit (OEIC) for short-distance optical communications is realized in a 0.13- μm CMOS process. The OEIC consists of an on-chip silicon photodiode, a transimpedance amplifier with modified regulated cascode input configuration, an adaptive equalizer based upon slope-detection algorithm, and a limiting amplifier with merged negative impedance circuits. The proposed slope-detection adaptive equalizer compensates the limited bandwidth and the temperature variation of the integrated silicon photodiode. Measured results demonstrate 120-dB Ω transimpedance gain, 5.9-GHz bandwidth, - 3.2-dBm optical sensitivity for 10 -12 BER, and 47-mW power dissipation from a single 1.5-V supply. The OEIC chip core occupies the area of 0.1 mm2.",

keywords = "Adaptive equalizers, limiting amplifiers, negative impedance compensation, optoelectronic integrated circuits, silicon photodiodes, slope detection, transimpedance amplifiers",

author = "Dongmyung Lee and Jungwon Han and Gunhee Han and Park, {Sung Min}",

note = "Funding Information: Manuscript received April 14, 2010; revised July 16, 2010; accepted August 09, 2010. Date of publication October 14, 2010; date of current version December 03, 2010. This paper was approved by Guest Editor Jae-Yoon Sim. This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MEST) (2010-0001557). D. Lee and G. Han are with Yonsei University, Seoul, Korea. J. Han and S. M. Park are with the Ewha Womans University, Seoul, Korea (e-mail: smpark@ewha.ac.kr). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/JSSC.2010.2077050",

year = "2010",

month = dec,

doi = "10.1109/JSSC.2010.2077050",

language = "English",

volume = "45",

pages = "2861--2873",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - An 8.5-Gb/s fully integrated CMOS optoelectronic receiver using slope-detection adaptive equalizer

AU - Lee, Dongmyung

AU - Han, Jungwon

AU - Han, Gunhee

AU - Park, Sung Min

N1 - Funding Information: Manuscript received April 14, 2010; revised July 16, 2010; accepted August 09, 2010. Date of publication October 14, 2010; date of current version December 03, 2010. This paper was approved by Guest Editor Jae-Yoon Sim. This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MEST) (2010-0001557). D. Lee and G. Han are with Yonsei University, Seoul, Korea. J. Han and S. M. Park are with the Ewha Womans University, Seoul, Korea (e-mail: smpark@ewha.ac.kr). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/JSSC.2010.2077050

PY - 2010/12

Y1 - 2010/12

N2 - An 8.5-Gb/s single-chip optoelectronic integrated circuit (OEIC) for short-distance optical communications is realized in a 0.13- μm CMOS process. The OEIC consists of an on-chip silicon photodiode, a transimpedance amplifier with modified regulated cascode input configuration, an adaptive equalizer based upon slope-detection algorithm, and a limiting amplifier with merged negative impedance circuits. The proposed slope-detection adaptive equalizer compensates the limited bandwidth and the temperature variation of the integrated silicon photodiode. Measured results demonstrate 120-dB Ω transimpedance gain, 5.9-GHz bandwidth, - 3.2-dBm optical sensitivity for 10 -12 BER, and 47-mW power dissipation from a single 1.5-V supply. The OEIC chip core occupies the area of 0.1 mm2.

AB - An 8.5-Gb/s single-chip optoelectronic integrated circuit (OEIC) for short-distance optical communications is realized in a 0.13- μm CMOS process. The OEIC consists of an on-chip silicon photodiode, a transimpedance amplifier with modified regulated cascode input configuration, an adaptive equalizer based upon slope-detection algorithm, and a limiting amplifier with merged negative impedance circuits. The proposed slope-detection adaptive equalizer compensates the limited bandwidth and the temperature variation of the integrated silicon photodiode. Measured results demonstrate 120-dB Ω transimpedance gain, 5.9-GHz bandwidth, - 3.2-dBm optical sensitivity for 10 -12 BER, and 47-mW power dissipation from a single 1.5-V supply. The OEIC chip core occupies the area of 0.1 mm2.

KW - Adaptive equalizers

KW - limiting amplifiers

KW - negative impedance compensation

KW - optoelectronic integrated circuits

KW - silicon photodiodes

KW - slope detection

KW - transimpedance amplifiers

UR - http://www.scopus.com/inward/record.url?scp=78650074079&partnerID=8YFLogxK

U2 - 10.1109/JSSC.2010.2077050

DO - 10.1109/JSSC.2010.2077050

M3 - Article

AN - SCOPUS:78650074079

SN - 0018-9200

VL - 45

SP - 2861

EP - 2873

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 12

M1 - 5599945

ER -

An 8.5-Gb/s fully integrated CMOS optoelectronic receiver using slope-detection adaptive equalizer

Abstract

Keywords

Access to Document

Fingerprint

Cite this