An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

Hyungsoon Shin; Seungjun Lee

doi:10.1109/16.753725

An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

Hyungsoon Shin, Seungjun Lee

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

A new 0.1-μm MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction.

Original language	English
Pages (from-to)	820-822
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	4
DOIs	https://doi.org/10.1109/16.753725
State	Published - 1999

Keywords

Hot carriers
Integrated circuit doping
MOSFET's

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10.1109/16.753725

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@article{67e20da6ed21420abc5d5da88386b634,

title = "An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability",

abstract = "A new 0.1-μm MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction.",

keywords = "Hot carriers, Integrated circuit doping, MOSFET's",

author = "Hyungsoon Shin and Seungjun Lee",

year = "1999",

doi = "10.1109/16.753725",

language = "English",

volume = "46",

pages = "820--822",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

AU - Shin, Hyungsoon

AU - Lee, Seungjun

PY - 1999

Y1 - 1999

N2 - A new 0.1-μm MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction.

AB - A new 0.1-μm MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction.

KW - Hot carriers

KW - Integrated circuit doping

KW - MOSFET's

UR - https://www.scopus.com/pages/publications/0032650119

U2 - 10.1109/16.753725

DO - 10.1109/16.753725

M3 - Article

AN - SCOPUS:0032650119

SN - 0018-9383

VL - 46

SP - 820

EP - 822

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

Abstract

Keywords

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