Abstract
A new 0.1-μm MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction.
| Original language | English |
|---|---|
| Pages (from-to) | 820-822 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 46 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1999 |
Keywords
- Hot carriers
- Integrated circuit doping
- MOSFET's