TY - JOUR
T1 - Ambipolar Charge Transport in p-Type Cyclopentadithiophene-Based Polymer Semiconductors Enabled by D-A-A-D Configuration
AU - Yoo, Hyeonjin
AU - Sung, Mingi
AU - Ahn, Hyungju
AU - Yang, Dohyun
AU - Yoo, Jin Soo
AU - Lee, Junghoon
AU - Lee, Byoung Hoon
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/11/28
Y1 - 2023/11/28
N2 - Polymer semiconductors with hysteresis-free ambipolar charge transport characteristics are key elements for developing high-performance organic field-effect transistors and circuits. In this study, a new and facile strategy of simply reconfiguring the donor (D) and acceptor (A) moieties in the order D-A-A-D in the repeat units was proposed to prepare D-A-type polymer semiconductors with enhanced electron and hole mobilities and hysteresis-free transistor characteristics. In contrast to the conventional D-A-type polymer semiconductor based on cyclopentadithiophene (CDT) and pyridyl-2,1,3-thiadiazole (PT) (hereafter, PCDTPT), the newly developed polymer with CDT-PT-PT-CDT configuration (hereafter, PCPPC) exhibited hysteresis-free transistor characteristics and enhanced electron and hole mobilities of 0.41 and 1.50 cm2 V-1 s-1, respectively. Such improvements were attributed to the deepened conduction band edge of PCPPC compared with that of its D-A-type counterpart, PCDTPT. Owing to the improved ambipolar charge-transport characteristics, the organic complementary metal-oxide semiconductor inverters fabricated with the PCPPC charge transporting layers exhibited a remarkably high gain of greater than 165. Our results provided a simple but effective strategy for designing high-performance ambipolar polymer semiconductors.
AB - Polymer semiconductors with hysteresis-free ambipolar charge transport characteristics are key elements for developing high-performance organic field-effect transistors and circuits. In this study, a new and facile strategy of simply reconfiguring the donor (D) and acceptor (A) moieties in the order D-A-A-D in the repeat units was proposed to prepare D-A-type polymer semiconductors with enhanced electron and hole mobilities and hysteresis-free transistor characteristics. In contrast to the conventional D-A-type polymer semiconductor based on cyclopentadithiophene (CDT) and pyridyl-2,1,3-thiadiazole (PT) (hereafter, PCDTPT), the newly developed polymer with CDT-PT-PT-CDT configuration (hereafter, PCPPC) exhibited hysteresis-free transistor characteristics and enhanced electron and hole mobilities of 0.41 and 1.50 cm2 V-1 s-1, respectively. Such improvements were attributed to the deepened conduction band edge of PCPPC compared with that of its D-A-type counterpart, PCDTPT. Owing to the improved ambipolar charge-transport characteristics, the organic complementary metal-oxide semiconductor inverters fabricated with the PCPPC charge transporting layers exhibited a remarkably high gain of greater than 165. Our results provided a simple but effective strategy for designing high-performance ambipolar polymer semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=85178105656&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.3c01570
DO - 10.1021/acs.chemmater.3c01570
M3 - Article
AN - SCOPUS:85178105656
SN - 0897-4756
VL - 35
SP - 9562
EP - 9571
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 22
ER -