Abstract
Achieving commercially viable luminescent devices requires the design of synthetic materials that are non-toxic, stable, and cost effective. However, despite the tremendous efforts to optimize the synthesis and improve the functionality of conventional semiconductors, the commercial potential and performance of these materials are often compromised. All-inorganic copper halides, which are characterized by an anionic CumXn framework counterbalanced by inorganic cations, have emerged as potential candidates for next-generation light-emitting devices. Their structural versatility combined with their superior emission performance make them attractive for the development of semiconductor devices realized at low cost. Here, we discuss the current understanding of the structural and photophysical properties of copper halides and present recent advances in their integration into devices and critical issues for realizing next-generation semiconductor devices for optoelectronics.
Original language | English |
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Article number | 101171 |
Journal | Cell Reports Physical Science |
Volume | 3 |
Issue number | 12 |
DOIs | |
State | Published - 21 Dec 2022 |
Bibliographical note
Funding Information:This work was supported by a National Research Foundation (NRF) of Korea grant funded by the Korean government ( 2020R 1A 2C 3003958 ).
Publisher Copyright:
© 2022 The Authors
Keywords
- all-inorganic copper halides
- light-emitting diodes
- metal-halide frameworks
- self-trapped excitons
- X-ray scintillators