Abstract
Magnetoresistive random access memory (MRAM) using a magnetic tunnel junction (MTJ) memory cell has the potential to revolutionize both high-density and high-speed memory applications with devices exhibiting non-volatility and good write endurance. This work presents a macromodel for an MTJ that is applicable to an HSPICE circuit simulator. The macromodel is realized as a five-terminal subcircuit that reproduces, the characteristics of an MTJ including hysteresis and asteroid curves with thermal variation, and the R-V characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 2696-2700 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 44 |
| Issue number | 4 B |
| DOIs | |
| State | Published - Apr 2005 |
Keywords
- Asteroid curve
- Hysteresis
- Macromodel
- MRAM
- MTJ
- R-V characteristics