Advanced HSPICE macromodel for magnetic tunnel junction

Seungyeon Lee, Seungjun Lee, Hyungsoon Shin, Daejung Kim

Research output: Contribution to journalArticlepeer-review

37 Scopus citations


Magnetoresistive random access memory (MRAM) using a magnetic tunnel junction (MTJ) memory cell has the potential to revolutionize both high-density and high-speed memory applications with devices exhibiting non-volatility and good write endurance. This work presents a macromodel for an MTJ that is applicable to an HSPICE circuit simulator. The macromodel is realized as a five-terminal subcircuit that reproduces, the characteristics of an MTJ including hysteresis and asteroid curves with thermal variation, and the R-V characteristics.

Original languageEnglish
Pages (from-to)2696-2700
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
StatePublished - Apr 2005


  • Asteroid curve
  • Hysteresis
  • Macromodel
  • MRAM
  • MTJ
  • R-V characteristics


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