Advanced circuit-level model of magnetic tunnel junction-based spin-torque oscillator with perpendicular anisotropy field

Miryeon Kim, Hyein Lim, Sora Ahn, Seungjun Lee, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.

Original languageEnglish
Pages (from-to)556-561
Number of pages6
JournalJournal of Semiconductor Technology and Science
Volume13
Issue number6
DOIs
StatePublished - Dec 2013

Keywords

  • Circuit-level model
  • Index terms-spin-torque oscillator
  • Magnetic tunnel junction
  • Perpendicular anisotropy
  • Perpendicular torque

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