Abstract
A circuit-level model of a magnetic tunnel junction (MTJ) that accurately depicts the spin-transfer torque switching behavior of an MTJ along with its voltage/temperature dependency is presented. The unified switching model that was suggested in our previous work is suitable for the circuit-level model because the model seamlessly covers the entire current pulsewidth region. Based on this switching behavior model, a method of dynamic current monitoring is proposed for an advanced circuit-level model. The voltage/temperature characteristics of an MTJ are also integrated for a more accurate circuit-level simulation. The proposed model corresponds well with the experimental data for switching characteristics at different temperatures. The design margin in the read/write circuits with an MTJ is analyzed to demonstrate the effectiveness of the model.
| Original language | English |
|---|---|
| Article number | 6998049 |
| Pages (from-to) | 666-672 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 62 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1 Feb 2015 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.
Keywords
- Magnetic tunnel junction (MTJ)
- magnetoresistive random access memory (MRAM)
- spin-transfer torque (STT)
- tunneling magnetoresistance (TMR)