Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering

Gi Soon Park; Van Ben Chu; Byoung Woo Kim; Dong Wook Kim; Hyung Suk Oh; Yun Jeong Hwang; Byoung Koun Min

doi:10.1021/acsami.8b00526

Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)₂ Thin Film Solar Cell through Interface Engineering

Gi Soon Park, Van Ben Chu, Byoung Woo Kim, Dong Wook Kim, Hyung Suk Oh, Yun Jeong Hwang, Byoung Koun Min

Department of Physics

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)₂ (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu_2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis.

Original language	English
Pages (from-to)	9894-9899
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	12
DOIs	https://doi.org/10.1021/acsami.8b00526
State	Published - 28 Mar 2018

Bibliographical note

Publisher Copyright:
© 2018 American Chemical Society.

Access to Document

10.1021/acsami.8b00526

Cite this

@article{54e4565a5f0347beb7dc5cc1155fec95,

title = "Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering",

abstract = "An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel {"}3-step chalcogenization process{"} for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable {"}spike{"} type conduction band alignment instead of {"}cliff{"} type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis.",

author = "Park, {Gi Soon} and Chu, {Van Ben} and Kim, {Byoung Woo} and Kim, {Dong Wook} and Oh, {Hyung Suk} and Hwang, {Yun Jeong} and Min, {Byoung Koun}",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = mar,

day = "28",

doi = "10.1021/acsami.8b00526",

language = "English",

volume = "10",

pages = "9894--9899",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering

AU - Park, Gi Soon

AU - Chu, Van Ben

AU - Kim, Byoung Woo

AU - Kim, Dong Wook

AU - Oh, Hyung Suk

AU - Hwang, Yun Jeong

AU - Min, Byoung Koun

PY - 2018/3/28

Y1 - 2018/3/28

N2 - An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis.

AB - An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis.

UR - http://www.scopus.com/inward/record.url?scp=85044663184&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b00526

DO - 10.1021/acsami.8b00526

M3 - Article

C2 - 29528214

AN - SCOPUS:85044663184

SN - 1944-8244

VL - 10

SP - 9894

EP - 9899

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 12

ER -