Accurate Profile Simulation Parameters for BF2 Implants in Pre-amorphized Silicon

A. F. Tasch, H. Shin, C. Park, J. Alvis, J. Pfiester, S. Novak

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Currently much attention is focused on the formation of shallow p +-n source-drain junctions for submicrometer CMOS technologies. In order to avoid the undesired channeling effects associated with B+ or BF2+ ion implantation, the surface region of the silicon wafer is pre-amorphized by a silicon or germanium implant. In this brief are reported the simulation parameters that allow accurate simulation of as-implanted boron profiles in silicon obtained by BF2+ implants into pre-amorphized silicon. Parameters are provided which allow simulation using either a Gaussian distribution function or a Pearson distribution function, the latter providing a slight improvement in accuracy. The energy range covered by these parameters is 15–80 keV, which results in as-implanted junction depths of 800–1800 A.

Original languageEnglish
Pages (from-to)149-152
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - Jan 1989


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