Abstract
Currently much attention is focused on the formation of shallow p +-n source-drain junctions for submicrometer CMOS technologies. In order to avoid the undesired channeling effects associated with B+ or BF2+ ion implantation, the surface region of the silicon wafer is pre-amorphized by a silicon or germanium implant. In this brief are reported the simulation parameters that allow accurate simulation of as-implanted boron profiles in silicon obtained by BF2+ implants into pre-amorphized silicon. Parameters are provided which allow simulation using either a Gaussian distribution function or a Pearson distribution function, the latter providing a slight improvement in accuracy. The energy range covered by these parameters is 15–80 keV, which results in as-implanted junction depths of 800–1800 A.
Original language | English |
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Pages (from-to) | 149-152 |
Number of pages | 4 |
Journal | IEEE Transactions on Electron Devices |
Volume | 36 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1989 |