Currently much attention is focused on the formation of shallow p +-n source-drain junctions for submicrometer CMOS technologies. In order to avoid the undesired channeling effects associated with B+ or BF2+ ion implantation, the surface region of the silicon wafer is pre-amorphized by a silicon or germanium implant. In this brief are reported the simulation parameters that allow accurate simulation of as-implanted boron profiles in silicon obtained by BF2+ implants into pre-amorphized silicon. Parameters are provided which allow simulation using either a Gaussian distribution function or a Pearson distribution function, the latter providing a slight improvement in accuracy. The energy range covered by these parameters is 15–80 keV, which results in as-implanted junction depths of 800–1800 A.