Absorption coefficient estimation of thin MoS                         2                          film using attenuation of silicon substrate Raman signal

Joon Young Kwak

doi:10.1016/j.rinp.2019.102202

Absorption coefficient estimation of thin MoS ₂ film using attenuation of silicon substrate Raman signal

Joon Young Kwak

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

A simple, non-destructive, and convenient method using Raman spectroscopy and Atomic Force Microscopy for extracting the absorption coefficient of MoS ₂ is presented. The attenuation of the substrate Raman signal intensity due to the MoS ₂ overlayer is found to be dependent on the MoS ₂ film thickness estimated from the AFM measurements. Using the light attenuation model from the measurements, the experimentally extracted absorption coefficient of the thin MoS ₂ flakes is determined to be 2.8 × 10 ⁶ cm ⁻¹ . This simple technique is capable of estimating the absorption coefficient of other two-dimensional layered materials.

Original language	English
Article number	102202
Journal	Results in Physics
Volume	13
DOIs	https://doi.org/10.1016/j.rinp.2019.102202
State	Published - Jun 2019

Bibliographical note

Publisher Copyright:
© 2019 The Author

Keywords

Absorption coefficient
Attenuation
MoS
Substrate Raman

Access to Document

10.1016/j.rinp.2019.102202

Cite this

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title = " Absorption coefficient estimation of thin MoS 2 film using attenuation of silicon substrate Raman signal ",

abstract = " A simple, non-destructive, and convenient method using Raman spectroscopy and Atomic Force Microscopy for extracting the absorption coefficient of MoS 2 is presented. The attenuation of the substrate Raman signal intensity due to the MoS 2 overlayer is found to be dependent on the MoS 2 film thickness estimated from the AFM measurements. Using the light attenuation model from the measurements, the experimentally extracted absorption coefficient of the thin MoS 2 flakes is determined to be 2.8 × 10 6 cm −1 . This simple technique is capable of estimating the absorption coefficient of other two-dimensional layered materials.",

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AB - A simple, non-destructive, and convenient method using Raman spectroscopy and Atomic Force Microscopy for extracting the absorption coefficient of MoS 2 is presented. The attenuation of the substrate Raman signal intensity due to the MoS 2 overlayer is found to be dependent on the MoS 2 film thickness estimated from the AFM measurements. Using the light attenuation model from the measurements, the experimentally extracted absorption coefficient of the thin MoS 2 flakes is determined to be 2.8 × 10 6 cm −1 . This simple technique is capable of estimating the absorption coefficient of other two-dimensional layered materials.

KW - Absorption coefficient

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KW - Substrate Raman

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