Abnormal resistance switching behaviours of NiO thin films: Possible occurrence of both formation and rupturing of conducting channels

Chunli Liu, S. C. Chae, J. S. Lee, S. H. Chang, S. B. Lee, D. W. Kim, C. U. Jung, S. Seo, S. E. Ahn, B. Kahng, T. W. Noh

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Abstract

We report a detailed study on the abnormal resistance switching behaviours observed in NiO thin films which show unipolar resistance switching phenomena. During the RESET process, in which the NiO film changed from a low resistance state to a high resistance state, we sometimes observed that the resistance became smaller than the initial value. We simulated the resistance switching by using a random circuit breaker network model. We found that local conducting channels could be formed as well as ruptured during the RESET process, which result in the occurrence of such abnormal switching behaviours.

Original languageEnglish
Article number015506
JournalJournal of Physics D: Applied Physics
Volume42
Issue number1
DOIs
StatePublished - Jan 2009

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