Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si

Yonghyun Kim, Gyeong Hwang, Sanjay K. Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate As-vacancy deactivation and interstitial-mediated As diffusion in strained Si by using density functional theory calculation. First, we find that biaxial tensile strain will not have a significant effect on the binding energies of As-vacancies. Second, tensile strain increases the stability of the diffusing As-Sii pairs. Our results could be one of the reasons that explain why As activation/deactivation and interstitial-mediated As TED has a weak dependence on biaxial tensile strain experimentally.

Original languageEnglish
Title of host publication2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages79-82
Number of pages4
ISBN (Print)1424404045, 9781424404049
DOIs
StatePublished - 2006
Event2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 - Monterey, CA, United States
Duration: 6 Sep 20068 Sep 2006

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
Country/TerritoryUnited States
CityMonterey, CA
Period6/09/068/09/06

Keywords

  • Arsenic
  • Deactivation
  • Diffusion
  • Silicon
  • Strain

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