@inproceedings{dc458a3b84b8499b9bfff0b350353472,
title = "Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si",
abstract = "We investigate As-vacancy deactivation and interstitial-mediated As diffusion in strained Si by using density functional theory calculation. First, we find that biaxial tensile strain will not have a significant effect on the binding energies of As-vacancies. Second, tensile strain increases the stability of the diffusing As-Sii pairs. Our results could be one of the reasons that explain why As activation/deactivation and interstitial-mediated As TED has a weak dependence on biaxial tensile strain experimentally.",
keywords = "Arsenic, Deactivation, Diffusion, Silicon, Strain",
author = "Yonghyun Kim and Gyeong Hwang and Banerjee, {Sanjay K.}",
year = "2006",
doi = "10.1109/SISPAD.2006.282843",
language = "English",
isbn = "1424404045",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "79--82",
booktitle = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06",
note = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 ; Conference date: 06-09-2006 Through 08-09-2006",
}