Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si

Yonghyun Kim; Gyeong Hwang; Sanjay K. Banerjee

doi:10.1109/SISPAD.2006.282843

Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si

Yonghyun Kim, Gyeong Hwang, Sanjay K. Banerjee

Department of Chemical Engineering & Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We investigate As-vacancy deactivation and interstitial-mediated As diffusion in strained Si by using density functional theory calculation. First, we find that biaxial tensile strain will not have a significant effect on the binding energies of As-vacancies. Second, tensile strain increases the stability of the diffusing As-Si_i pairs. Our results could be one of the reasons that explain why As activation/deactivation and interstitial-mediated As TED has a weak dependence on biaxial tensile strain experimentally.

Original language	English
Title of host publication	2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	79-82
Number of pages	4
ISBN (Print)	1424404045, 9781424404049
DOIs	https://doi.org/10.1109/SISPAD.2006.282843
State	Published - 2006
Event	2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 - Monterey, CA, United States Duration: 6 Sep 2006 → 8 Sep 2006

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
Country/Territory	United States
City	Monterey, CA
Period	6/09/06 → 8/09/06

Keywords

Arsenic
Deactivation
Diffusion
Silicon
Strain

Access to Document

10.1109/SISPAD.2006.282843

Cite this

Kim, Y., Hwang, G., & Banerjee, S. K. (2006). Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si. In 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 (pp. 79-82). Article 4061586 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2006.282843

Kim, Yonghyun ; Hwang, Gyeong ; Banerjee, Sanjay K. / Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si. 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06. Institute of Electrical and Electronics Engineers Inc., 2006. pp. 79-82 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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title = "Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si",

abstract = "We investigate As-vacancy deactivation and interstitial-mediated As diffusion in strained Si by using density functional theory calculation. First, we find that biaxial tensile strain will not have a significant effect on the binding energies of As-vacancies. Second, tensile strain increases the stability of the diffusing As-Sii pairs. Our results could be one of the reasons that explain why As activation/deactivation and interstitial-mediated As TED has a weak dependence on biaxial tensile strain experimentally.",

keywords = "Arsenic, Deactivation, Diffusion, Silicon, Strain",

author = "Yonghyun Kim and Gyeong Hwang and Banerjee, {Sanjay K.}",

year = "2006",

doi = "10.1109/SISPAD.2006.282843",

language = "English",

isbn = "1424404045",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "79--82",

booktitle = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06",

note = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 ; Conference date: 06-09-2006 Through 08-09-2006",

}

Kim, Y, Hwang, G & Banerjee, SK 2006, Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si. in 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06., 4061586, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., pp. 79-82, 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06, Monterey, CA, United States, 6/09/06. https://doi.org/10.1109/SISPAD.2006.282843

Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si. / Kim, Yonghyun; Hwang, Gyeong; Banerjee, Sanjay K.
2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06. Institute of Electrical and Electronics Engineers Inc., 2006. p. 79-82 4061586 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si

AU - Kim, Yonghyun

AU - Hwang, Gyeong

AU - Banerjee, Sanjay K.

PY - 2006

Y1 - 2006

N2 - We investigate As-vacancy deactivation and interstitial-mediated As diffusion in strained Si by using density functional theory calculation. First, we find that biaxial tensile strain will not have a significant effect on the binding energies of As-vacancies. Second, tensile strain increases the stability of the diffusing As-Sii pairs. Our results could be one of the reasons that explain why As activation/deactivation and interstitial-mediated As TED has a weak dependence on biaxial tensile strain experimentally.

AB - We investigate As-vacancy deactivation and interstitial-mediated As diffusion in strained Si by using density functional theory calculation. First, we find that biaxial tensile strain will not have a significant effect on the binding energies of As-vacancies. Second, tensile strain increases the stability of the diffusing As-Sii pairs. Our results could be one of the reasons that explain why As activation/deactivation and interstitial-mediated As TED has a weak dependence on biaxial tensile strain experimentally.

KW - Arsenic

KW - Deactivation

KW - Diffusion

KW - Silicon

KW - Strain

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U2 - 10.1109/SISPAD.2006.282843

DO - 10.1109/SISPAD.2006.282843

M3 - Conference contribution

AN - SCOPUS:42549154364

SN - 1424404045

SN - 9781424404049

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 79

EP - 82

BT - 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06

Y2 - 6 September 2006 through 8 September 2006

ER -

Kim Y, Hwang G, Banerjee SK. Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si. In 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06. Institute of Electrical and Electronics Engineers Inc. 2006. p. 79-82. 4061586. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2006.282843

Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si

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