A unified-RAM (URAM) cell for multi-functioning capacitorless DRAM and NVM

Jin Woo Han; Seong Wan Ryu; Chungjin Kim; Sungho Kim; Maesoon Im; Jin Choi Sung; Soo Kim Jin; Hee Kim Kwang; Sung Lee Gi; Sub Oh Jae; Ho Song Myeong; Chang Park Yun; Woo Kim Jeoung; Yang Kyu Choi

doi:10.1109/IEDM.2007.4419104

A unified-RAM (URAM) cell for multi-functioning capacitorless DRAM and NVM

Jin Woo Han, Seong Wan Ryu, Chungjin Kim, Sungho Kim, Maesoon Im, Jin Choi Sung, Soo Kim Jin, Hee Kim Kwang, Sung Lee Gi, Sub Oh Jae, Ho Song Myeong, Chang Park Yun, Woo Kim Jeoung, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

A novel partially-depleted (PD) SONOS FinFET is demonstrated for unified function of a high speed capacitorless 1T-DRAM and non-volatile memory (NVM). A floating body and O/N/O layer are combined in a single FinFET to provide multi-functional unified-RAM (URAM) operation. The fabricated URAM shows a V_T window of 3V with a retention time exceeding 10 years for NVM operation and a sensing margin of 9μA with a program/erase time of 10nsec for IT-DRAM operation in a single memory cell transistor.

Original language	English
Article number	4419104
Pages (from-to)	929-932
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4419104
State	Published - 2007
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 10 Dec 2007 → 12 Dec 2007

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Han, J. W., Ryu, S. W., Kim, C., Kim, S., Im, M., Sung, J. C., Jin, S. K., Kwang, H. K., Gi, S. L., Jae, S. O., Myeong, H. S., Yun, C. P., Jeoung, W. K., & Choi, Y. K. (2007). A unified-RAM (URAM) cell for multi-functioning capacitorless DRAM and NVM. Technical Digest - International Electron Devices Meeting, IEDM, 929-932. Article 4419104. https://doi.org/10.1109/IEDM.2007.4419104

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title = "A unified-RAM (URAM) cell for multi-functioning capacitorless DRAM and NVM",

abstract = "A novel partially-depleted (PD) SONOS FinFET is demonstrated for unified function of a high speed capacitorless 1T-DRAM and non-volatile memory (NVM). A floating body and O/N/O layer are combined in a single FinFET to provide multi-functional unified-RAM (URAM) operation. The fabricated URAM shows a VT window of 3V with a retention time exceeding 10 years for NVM operation and a sensing margin of 9μA with a program/erase time of 10nsec for IT-DRAM operation in a single memory cell transistor.",

author = "Han, {Jin Woo} and Ryu, {Seong Wan} and Chungjin Kim and Sungho Kim and Maesoon Im and Sung, {Jin Choi} and Jin, {Soo Kim} and Kwang, {Hee Kim} and Gi, {Sung Lee} and Jae, {Sub Oh} and Myeong, {Ho Song} and Yun, {Chang Park} and Jeoung, {Woo Kim} and Choi, {Yang Kyu}",

year = "2007",

doi = "10.1109/IEDM.2007.4419104",

language = "English",

pages = "929--932",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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T1 - A unified-RAM (URAM) cell for multi-functioning capacitorless DRAM and NVM

AU - Han, Jin Woo

AU - Ryu, Seong Wan

AU - Kim, Chungjin

AU - Kim, Sungho

AU - Im, Maesoon

AU - Sung, Jin Choi

AU - Jin, Soo Kim

AU - Kwang, Hee Kim

AU - Gi, Sung Lee

AU - Jae, Sub Oh

AU - Myeong, Ho Song

AU - Yun, Chang Park

AU - Jeoung, Woo Kim

AU - Choi, Yang Kyu

PY - 2007

Y1 - 2007

N2 - A novel partially-depleted (PD) SONOS FinFET is demonstrated for unified function of a high speed capacitorless 1T-DRAM and non-volatile memory (NVM). A floating body and O/N/O layer are combined in a single FinFET to provide multi-functional unified-RAM (URAM) operation. The fabricated URAM shows a VT window of 3V with a retention time exceeding 10 years for NVM operation and a sensing margin of 9μA with a program/erase time of 10nsec for IT-DRAM operation in a single memory cell transistor.

AB - A novel partially-depleted (PD) SONOS FinFET is demonstrated for unified function of a high speed capacitorless 1T-DRAM and non-volatile memory (NVM). A floating body and O/N/O layer are combined in a single FinFET to provide multi-functional unified-RAM (URAM) operation. The fabricated URAM shows a VT window of 3V with a retention time exceeding 10 years for NVM operation and a sensing margin of 9μA with a program/erase time of 10nsec for IT-DRAM operation in a single memory cell transistor.

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U2 - 10.1109/IEDM.2007.4419104

DO - 10.1109/IEDM.2007.4419104

M3 - Conference article

AN - SCOPUS:45749123479

SN - 0163-1918

SP - 929

EP - 932

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4419104

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

A unified-RAM (URAM) cell for multi-functioning capacitorless DRAM and NVM

Abstract

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