A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory

Harry Chung; Hyungsoon Shin; Jisun Park; Wookyung Sun

doi:10.3390/ma16010182

A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory

Harry Chung, Hyungsoon Shin, Jisun Park, Wookyung Sun

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resistive switching phenomena. To enhance the performance of the model by reflecting the physical properties such as the length index of the undoped area during the switching operation, the Voltage ThrEshold Adaptive Memristor (VTEAM) model and the tungsten-based model are combined to represent two different resistive switching phenomena. The accuracy of the I-V relationship curve tails of the device is improved significantly by adjusting the ranges of unified internal state variables. Furthermore, the unified model describes a variety of electrical characteristics and yields continuous results by using the device’s current-voltage relationship without dividing its fitting conditions. The unified model describes the optimized electrical characteristics that reflect the electrical behavior of the device.

Original language	English
Article number	182
Journal	Materials
Volume	16
Issue number	1
DOIs	https://doi.org/10.3390/ma16010182
State	Published - Jan 2023

Bibliographical note

Funding Information:
This research was funded by the National Research Foundation of Korea (NRF) (NRF-2020R1I1A1A01065622) and the National Research Foundation (NRF), Korea, under project BK21 FOUR.

Publisher Copyright:
© 2022 by the authors.

Keywords

HSPICE
memristive device
memristor
resistive random-access memory (RRAM)
resistive switching

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title = "A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory",

abstract = "Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resistive switching phenomena. To enhance the performance of the model by reflecting the physical properties such as the length index of the undoped area during the switching operation, the Voltage ThrEshold Adaptive Memristor (VTEAM) model and the tungsten-based model are combined to represent two different resistive switching phenomena. The accuracy of the I-V relationship curve tails of the device is improved significantly by adjusting the ranges of unified internal state variables. Furthermore, the unified model describes a variety of electrical characteristics and yields continuous results by using the device{\textquoteright}s current-voltage relationship without dividing its fitting conditions. The unified model describes the optimized electrical characteristics that reflect the electrical behavior of the device.",

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author = "Harry Chung and Hyungsoon Shin and Jisun Park and Wookyung Sun",

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N1 - Funding Information: This research was funded by the National Research Foundation of Korea (NRF) (NRF-2020R1I1A1A01065622) and the National Research Foundation (NRF), Korea, under project BK21 FOUR. Publisher Copyright: © 2022 by the authors.

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N2 - Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resistive switching phenomena. To enhance the performance of the model by reflecting the physical properties such as the length index of the undoped area during the switching operation, the Voltage ThrEshold Adaptive Memristor (VTEAM) model and the tungsten-based model are combined to represent two different resistive switching phenomena. The accuracy of the I-V relationship curve tails of the device is improved significantly by adjusting the ranges of unified internal state variables. Furthermore, the unified model describes a variety of electrical characteristics and yields continuous results by using the device’s current-voltage relationship without dividing its fitting conditions. The unified model describes the optimized electrical characteristics that reflect the electrical behavior of the device.

AB - Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resistive switching phenomena. To enhance the performance of the model by reflecting the physical properties such as the length index of the undoped area during the switching operation, the Voltage ThrEshold Adaptive Memristor (VTEAM) model and the tungsten-based model are combined to represent two different resistive switching phenomena. The accuracy of the I-V relationship curve tails of the device is improved significantly by adjusting the ranges of unified internal state variables. Furthermore, the unified model describes a variety of electrical characteristics and yields continuous results by using the device’s current-voltage relationship without dividing its fitting conditions. The unified model describes the optimized electrical characteristics that reflect the electrical behavior of the device.

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A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory

Abstract

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Keywords

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