A triple-level cell charge trap flash memory device with CVD-grown MoS2

Minkyung Kim; Eunpyo Park; Jongkil Park; Jaewook Kim; Yeon Joo Jeong; Suyoun Lee; Inho Kim; Jong Keuk Park; Sung Yun Park; Joon Young Kwak

doi:10.1016/j.rinp.2022.105620

A triple-level cell charge trap flash memory device with CVD-grown MoS₂

Minkyung Kim, Eunpyo Park, Jongkil Park, Jaewook Kim, Yeon Joo Jeong, Suyoun Lee, Inho Kim, Jong Keuk Park, Sung Yun Park, Joon Young Kwak

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This study investigates the triple-level cell (TLC) memory retention of a MoS₂-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-κ gate dielectric is found to have a high coupling ratio, which enhances the tunneling efficiency for programming. The fabricated devices show the long memory retention performance for each state, demonstrating the feasibility of a robust TLC CTF memory device based on a CVD grown 2D material.

Original language	English
Article number	105620
Journal	Results in Physics
Volume	38
DOIs	https://doi.org/10.1016/j.rinp.2022.105620
State	Published - Jul 2022

Bibliographical note

Publisher Copyright:
© 2022 The Author(s)

Keywords

Charge trap flash
MoS
Triple-level cell

Access to Document

10.1016/j.rinp.2022.105620

Cite this

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title = "A triple-level cell charge trap flash memory device with CVD-grown MoS2",

abstract = "This study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-κ gate dielectric is found to have a high coupling ratio, which enhances the tunneling efficiency for programming. The fabricated devices show the long memory retention performance for each state, demonstrating the feasibility of a robust TLC CTF memory device based on a CVD grown 2D material.",

keywords = "Charge trap flash, MoS, Triple-level cell",

author = "Minkyung Kim and Eunpyo Park and Jongkil Park and Jaewook Kim and Jeong, {Yeon Joo} and Suyoun Lee and Inho Kim and Park, {Jong Keuk} and Park, {Sung Yun} and Kwak, {Joon Young}",

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year = "2022",

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T1 - A triple-level cell charge trap flash memory device with CVD-grown MoS2

AU - Kim, Minkyung

AU - Park, Eunpyo

AU - Park, Jongkil

AU - Kim, Jaewook

AU - Jeong, Yeon Joo

AU - Lee, Suyoun

AU - Kim, Inho

AU - Park, Jong Keuk

AU - Park, Sung Yun

AU - Kwak, Joon Young

PY - 2022/7

Y1 - 2022/7

N2 - This study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-κ gate dielectric is found to have a high coupling ratio, which enhances the tunneling efficiency for programming. The fabricated devices show the long memory retention performance for each state, demonstrating the feasibility of a robust TLC CTF memory device based on a CVD grown 2D material.

AB - This study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-κ gate dielectric is found to have a high coupling ratio, which enhances the tunneling efficiency for programming. The fabricated devices show the long memory retention performance for each state, demonstrating the feasibility of a robust TLC CTF memory device based on a CVD grown 2D material.

KW - Charge trap flash

KW - MoS

KW - Triple-level cell

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DO - 10.1016/j.rinp.2022.105620

M3 - Article

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SN - 2211-3797

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JO - Results in Physics

JF - Results in Physics

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