@article{09e62682d6044757a53d4cb32f96a5bc,
title = "A switchable dual-mode fully-differential common-source low-noise amplifier in 0.18-μm CMOS technology",
abstract = "A highly-integrated switchable dual-mode low-noise amplifier (LNA) is proposed and implemented in standard 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology for ultra-high frequency-radio-frequency identification (UHF RFID) reader receivers. This dual-mode LNA can be controlled to operate in two different modes in order to meet the requirements for the listen-before-talk mode and the normal mode of the UHF RFID reader receiver, respectively. The fully-differential common-source cascode topology with perfect input impedance matching, capacitive cross-coupling, and common-mode feedback techniques are employed to improve its performance. Measurement results show that, from a single power supply of 1.8 V, the LNA achieved the power gain (S21) of 9.1 dB, the input power reflection (S11) of −20 dB, the minimum noise figure (NF) of 3.6 dB, and the P1dB of −5 dBm in high-gain mode. In high-linearity mode, S21 of 3.2 dB, S11 of −17 dB, NF of 5.2 dB, and P1dB of −1.3 dBm were obtained.",
keywords = "dual-mode, high gain, high linearity, LNA, UHF RFID",
author = "Changchun Zhang and Yongkai Wang and Shenjun Gao and Lu Tang and Yi Zhang and Park, {Sung Min}",
note = "Funding Information: This work is supported by the Natural Science Foundation of China (Nos. 61604082, 61674036) and the 14th “Six Talent Peaks” Project of Jiangsu Province (No. XYDXX‐080). Funding Information: Changchun Zhang zhangcc@njupt.edu.cn Yongkai Wang Shenjun Gao Lu Tang Yi Zhang Sung Min Park College of Electronic and Optical Engineering & College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing China School of Information Science and Engineering Southeast University Nanjing China Department of Electronic and Electrical Engineering Ewha Womans University Seoul Korea dual‐mode high gain high linearity LNA UHF RFID National Natural Science Foundation of China 61604082 61674036 14th “Six Talent Peaks” Project of Jiangsu Province XYDXX‐080 Funding Information: A highly‐integrated switchable dual‐mode low‐noise amplifier (LNA) is proposed and implemented in standard 0.18 μm complementary metal‐oxide‐semiconductor (CMOS) technology for ultra‐high frequency‐radio‐frequency identification (UHF RFID) reader receivers. This dual‐mode LNA can be controlled to operate in two different modes in order to meet the requirements for the listen‐before‐talk mode and the normal mode of the UHF RFID reader receiver, respectively. The fully‐differential common‐source cascode topology with perfect input impedance matching, capacitive cross‐coupling, and common‐mode feedback techniques are employed to improve its performance. Measurement results show that, from a single power supply of 1.8 V, the LNA achieved the power gain (S21) of 9.1 dB, the input power reflection (S11) of −20 dB, the minimum noise figure (NF) of 3.6 dB, and the P 1dB of −5 dBm in high‐gain mode. In high‐linearity mode, S21 of 3.2 dB, S11 of −17 dB, NF of 5.2 dB, and P1dB of −1.3 dBm were obtained. Funding information National Natural Science Foundation of China, Grant/Award Numbers: 61604082, 61674036; the 14th “Six Talent Peaks” Project of Jiangsu Province, Grant/Award Number: XYDXX‐080 Funding Information: information National Natural Science Foundation of China, Grant/Award Numbers: 61604082, 61674036; the 14th ?Six Talent Peaks? Project of Jiangsu Province, Grant/Award Number: XYDXX-080 This work is supported by the Natural Science Foundation of China (Nos. 61604082, 61674036) and the 14th ?Six Talent Peaks? Project of Jiangsu Province (No. XYDXX-080). Publisher Copyright: {\textcopyright} 2019 Wiley Periodicals, Inc.",
year = "2020",
month = mar,
day = "1",
doi = "10.1002/mop.32169",
language = "English",
volume = "62",
pages = "1163--1168",
journal = "Microwave and Optical Technology Letters",
issn = "0895-2477",
publisher = "John Wiley & Sons Inc.",
number = "3",
}