A study on the magnetic properties of hydrogen-implanted Zn0.96Mn0.04O films

S. Y. Park, S. W. Shin, P. J. Kim, J. H. Kang, T. H. Kim, Y. P. Lee

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Mn-doped ZnO films (for Mn at% ∼4%) were implanted using 30 keV H+ ions with a dose of 6.9×1016 cm-2 and subsequently annealed at 300 °C to study the effect of magnetism on the interstitial hydrogen in n-type II-VI magnetic semiconductors by using secondary ion mass spectroscopy (SIMS), Hall measurement and SQUID. We observed that the interstitial hydrogen leads to the changes in the magnetic hysteresis loop as well as the enhancement of carrier concentrations in the Mn-doped ZnO film.

Original languageEnglish
Pages (from-to)e708-e710
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
StatePublished - Mar 2007

Keywords

  • Implantation
  • Magnetic semiconductor

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