A study on the magnetic properties of hydrogen-implanted Zn0.96Mn0.04O films

S. Y. Park; S. W. Shin; P. J. Kim; J. H. Kang; T. H. Kim; Y. P. Lee

doi:10.1016/j.jmmm.2006.10.1022

A study on the magnetic properties of hydrogen-implanted Zn_0.96Mn_0.04O films

S. Y. Park, S. W. Shin, P. J. Kim, J. H. Kang, T. H. Kim, Y. P. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Mn-doped ZnO films (for Mn at% ∼4%) were implanted using 30 keV H⁺ ions with a dose of 6.9×10¹⁶ cm^-2 and subsequently annealed at 300 °C to study the effect of magnetism on the interstitial hydrogen in n-type II-VI magnetic semiconductors by using secondary ion mass spectroscopy (SIMS), Hall measurement and SQUID. We observed that the interstitial hydrogen leads to the changes in the magnetic hysteresis loop as well as the enhancement of carrier concentrations in the Mn-doped ZnO film.

Original language	English
Pages (from-to)	e708-e710
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.1022
State	Published - Mar 2007

Bibliographical note

Funding Information:
This work was supported by MOST/KOSEF through the q-Psi.

Keywords

Implantation
Magnetic semiconductor

Access to Document

10.1016/j.jmmm.2006.10.1022

Cite this

@article{b0697284dcf648fca2c35a103b6d1472,

title = "A study on the magnetic properties of hydrogen-implanted Zn0.96Mn0.04O films",

abstract = "Mn-doped ZnO films (for Mn at% ∼4%) were implanted using 30 keV H+ ions with a dose of 6.9×1016 cm-2 and subsequently annealed at 300 °C to study the effect of magnetism on the interstitial hydrogen in n-type II-VI magnetic semiconductors by using secondary ion mass spectroscopy (SIMS), Hall measurement and SQUID. We observed that the interstitial hydrogen leads to the changes in the magnetic hysteresis loop as well as the enhancement of carrier concentrations in the Mn-doped ZnO film.",

keywords = "Implantation, Magnetic semiconductor",

author = "Park, {S. Y.} and Shin, {S. W.} and Kim, {P. J.} and Kang, {J. H.} and Kim, {T. H.} and Lee, {Y. P.}",

note = "Funding Information: This work was supported by MOST/KOSEF through the q-Psi.",

year = "2007",

month = mar,

doi = "10.1016/j.jmmm.2006.10.1022",

language = "English",

volume = "310",

pages = "e708--e710",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "2 SUPPL. PART 3",

}

TY - JOUR

T1 - A study on the magnetic properties of hydrogen-implanted Zn0.96Mn0.04O films

AU - Park, S. Y.

AU - Shin, S. W.

AU - Kim, P. J.

AU - Kang, J. H.

AU - Kim, T. H.

AU - Lee, Y. P.

N1 - Funding Information: This work was supported by MOST/KOSEF through the q-Psi.

PY - 2007/3

Y1 - 2007/3

N2 - Mn-doped ZnO films (for Mn at% ∼4%) were implanted using 30 keV H+ ions with a dose of 6.9×1016 cm-2 and subsequently annealed at 300 °C to study the effect of magnetism on the interstitial hydrogen in n-type II-VI magnetic semiconductors by using secondary ion mass spectroscopy (SIMS), Hall measurement and SQUID. We observed that the interstitial hydrogen leads to the changes in the magnetic hysteresis loop as well as the enhancement of carrier concentrations in the Mn-doped ZnO film.

AB - Mn-doped ZnO films (for Mn at% ∼4%) were implanted using 30 keV H+ ions with a dose of 6.9×1016 cm-2 and subsequently annealed at 300 °C to study the effect of magnetism on the interstitial hydrogen in n-type II-VI magnetic semiconductors by using secondary ion mass spectroscopy (SIMS), Hall measurement and SQUID. We observed that the interstitial hydrogen leads to the changes in the magnetic hysteresis loop as well as the enhancement of carrier concentrations in the Mn-doped ZnO film.

KW - Implantation

KW - Magnetic semiconductor

UR - http://www.scopus.com/inward/record.url?scp=33847681452&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.10.1022

DO - 10.1016/j.jmmm.2006.10.1022

M3 - Article

AN - SCOPUS:33847681452

SN - 0304-8853

VL - 310

SP - e708-e710

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -