TY - GEN
T1 - A single-microbead-based microfluidic diode for ultra-low Reynolds Number applications
AU - Sochol, Ryan D.
AU - Iwai, Kosuke
AU - Lei, Jonathan
AU - Lingam, Deepak
AU - Lee, Luke P.
AU - Lin, Liwei
PY - 2012
Y1 - 2012
N2 - Passive fluidic components that are capable of rectifying fluid flow at ultra-low Reynolds Number are critical to the advancement of micro/nanofluidic circuitry for diverse chemical and biological applications, such as sample preparation on chip, molecular diagnostics, point-of-care (POC) testing, and quantitative cell biology platforms. Previously, a wide range of diodic components have been developed to rectify flow in fluidic systems; however, engineering microfluidic diodes that function at the ultra-low Reynolds Number flows (i.e., Re < 0.25) of emerging micro/nanofluidic platforms has remained a considerable challenge. Here we present a microfluidic single-microbead-based diode (SMD) that uses a single suspended microbead as a dynamic resistive element to rectify fluid flow under Re ≤ 0.25 conditions. Simulations of the SMD yielded a theoretical diodicity (Di) of 1.4. Experiments for Re varying from 0.05 to 0.25 revealed average Di's ranging from 1.14±0.01 to 2.51±0.03.
AB - Passive fluidic components that are capable of rectifying fluid flow at ultra-low Reynolds Number are critical to the advancement of micro/nanofluidic circuitry for diverse chemical and biological applications, such as sample preparation on chip, molecular diagnostics, point-of-care (POC) testing, and quantitative cell biology platforms. Previously, a wide range of diodic components have been developed to rectify flow in fluidic systems; however, engineering microfluidic diodes that function at the ultra-low Reynolds Number flows (i.e., Re < 0.25) of emerging micro/nanofluidic platforms has remained a considerable challenge. Here we present a microfluidic single-microbead-based diode (SMD) that uses a single suspended microbead as a dynamic resistive element to rectify fluid flow under Re ≤ 0.25 conditions. Simulations of the SMD yielded a theoretical diodicity (Di) of 1.4. Experiments for Re varying from 0.05 to 0.25 revealed average Di's ranging from 1.14±0.01 to 2.51±0.03.
UR - http://www.scopus.com/inward/record.url?scp=84860487365&partnerID=8YFLogxK
U2 - 10.1109/MEMSYS.2012.6170118
DO - 10.1109/MEMSYS.2012.6170118
M3 - Conference contribution
AN - SCOPUS:84860487365
SN - 9781467303248
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 160
EP - 163
BT - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
T2 - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Y2 - 29 January 2012 through 2 February 2012
ER -