A sensing circuit for MRAM based on 2MTJ-2T structure

Eun Jung Jang; Seung Yoen Lee; Hye Jin Kim; Hyungsoon Shin; Seungjun Lee; Daejung Kim

doi:10.1016/j.cap.2003.09.007

A sensing circuit for MRAM based on 2MTJ-2T structure

Eun Jung Jang, Seung Yoen Lee, Hye Jin Kim, Hyungsoon Shin, Seungjun Lee, Daejung Kim

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We propose a novel sensing circuitry based on the new cell structure. Proposed sense amplifier detects small voltage difference between two MTJ's and develops it to full rail-to-rail voltage while maintaining small voltage difference on TMR cells by limiting gate voltage of the switch transistor between a pair of bit lines and a sense amplifier. The sense amplifier is small enough to fit into each column that the whole data array on selected word line is activated as in DRAMs for high-speed read-out by changing column addresses only. We verified the new sensing scheme in a 0.35 μm logic technology.

Original language	English
Pages (from-to)	19-24
Number of pages	6
Journal	Current Applied Physics
Volume	4
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2003.09.007
State	Published - Feb 2004

Keywords

High speed
MRAM
Sense amplifier
Synchronous

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10.1016/j.cap.2003.09.007

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title = "A sensing circuit for MRAM based on 2MTJ-2T structure",

abstract = "We propose a novel sensing circuitry based on the new cell structure. Proposed sense amplifier detects small voltage difference between two MTJ's and develops it to full rail-to-rail voltage while maintaining small voltage difference on TMR cells by limiting gate voltage of the switch transistor between a pair of bit lines and a sense amplifier. The sense amplifier is small enough to fit into each column that the whole data array on selected word line is activated as in DRAMs for high-speed read-out by changing column addresses only. We verified the new sensing scheme in a 0.35 μm logic technology.",

keywords = "High speed, MRAM, Sense amplifier, Synchronous",

author = "Jang, {Eun Jung} and Lee, {Seung Yoen} and Kim, {Hye Jin} and Hyungsoon Shin and Seungjun Lee and Daejung Kim",

year = "2004",

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doi = "10.1016/j.cap.2003.09.007",

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AU - Jang, Eun Jung

AU - Lee, Seung Yoen

AU - Kim, Hye Jin

AU - Shin, Hyungsoon

AU - Lee, Seungjun

AU - Kim, Daejung

PY - 2004/2

Y1 - 2004/2

N2 - We propose a novel sensing circuitry based on the new cell structure. Proposed sense amplifier detects small voltage difference between two MTJ's and develops it to full rail-to-rail voltage while maintaining small voltage difference on TMR cells by limiting gate voltage of the switch transistor between a pair of bit lines and a sense amplifier. The sense amplifier is small enough to fit into each column that the whole data array on selected word line is activated as in DRAMs for high-speed read-out by changing column addresses only. We verified the new sensing scheme in a 0.35 μm logic technology.

AB - We propose a novel sensing circuitry based on the new cell structure. Proposed sense amplifier detects small voltage difference between two MTJ's and develops it to full rail-to-rail voltage while maintaining small voltage difference on TMR cells by limiting gate voltage of the switch transistor between a pair of bit lines and a sense amplifier. The sense amplifier is small enough to fit into each column that the whole data array on selected word line is activated as in DRAMs for high-speed read-out by changing column addresses only. We verified the new sensing scheme in a 0.35 μm logic technology.

KW - High speed

KW - MRAM

KW - Sense amplifier

KW - Synchronous

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VL - 4

SP - 19

EP - 24

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1

ER -

A sensing circuit for MRAM based on 2MTJ-2T structure

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Keywords

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