A sensing circuit for MRAM based on 2MTJ-2T structure

Eun Jung Jang, Seung Yoen Lee, Hye Jin Kim, Hyungsoon Shin, Seungjun Lee, Daejung Kim

Research output: Contribution to journalArticlepeer-review


We propose a novel sensing circuitry based on the new cell structure. Proposed sense amplifier detects small voltage difference between two MTJ's and develops it to full rail-to-rail voltage while maintaining small voltage difference on TMR cells by limiting gate voltage of the switch transistor between a pair of bit lines and a sense amplifier. The sense amplifier is small enough to fit into each column that the whole data array on selected word line is activated as in DRAMs for high-speed read-out by changing column addresses only. We verified the new sensing scheme in a 0.35 μm logic technology.

Original languageEnglish
Pages (from-to)19-24
Number of pages6
JournalCurrent Applied Physics
Issue number1
StatePublished - Feb 2004


  • High speed
  • MRAM
  • Sense amplifier
  • Synchronous


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