A reliable extraction method for source and drain series resistances in silicon nanowire metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on radio-frequency analysis

Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Eou Sik Cho, Seongjae Cho, Jung Hee Lee, In Man Kang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

This paper presents a new extraction method for source and drain (S/D) series resistances of silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on small-signal radio-frequency (RF) analysis. The proposed method can be applied to the extraction of S/D series resistances for SNW MOSFETs with finite off-state channel resistance as well as gate bias-dependent on-state resistive components realized by 3-dimensional (3-D) device simulation. The series resistances as a function of frequency and gate voltage are presented and compared with the results obtained by an existing method with infinite off-state channel resistance model. The accuracy of the newly proposed parameter extraction method has been successfully verified by Z22-and Y-parameters up to 100 GHz operation frequency.

Original languageEnglish
Pages (from-to)8219-8224
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number11
DOIs
StatePublished - 1 Nov 2014

Bibliographical note

Publisher Copyright:
Copyright © 2014 American Scientific Publishers All rights reserved.

Keywords

  • Device simulation
  • Off-State channel resistance
  • Parameter extraction
  • Radio-Frequency (rf)
  • Series resistance
  • Silicon nanowire (snw)

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