Abstract
This paper presents a new extraction method for source and drain (S/D) series resistances of silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on small-signal radio-frequency (RF) analysis. The proposed method can be applied to the extraction of S/D series resistances for SNW MOSFETs with finite off-state channel resistance as well as gate bias-dependent on-state resistive components realized by 3-dimensional (3-D) device simulation. The series resistances as a function of frequency and gate voltage are presented and compared with the results obtained by an existing method with infinite off-state channel resistance model. The accuracy of the newly proposed parameter extraction method has been successfully verified by Z22-and Y-parameters up to 100 GHz operation frequency.
Original language | English |
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Pages (from-to) | 8219-8224 |
Number of pages | 6 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 14 |
Issue number | 11 |
DOIs | |
State | Published - 1 Nov 2014 |
Bibliographical note
Publisher Copyright:Copyright © 2014 American Scientific Publishers All rights reserved.
Keywords
- Device simulation
- Off-State channel resistance
- Parameter extraction
- Radio-Frequency (rf)
- Series resistance
- Silicon nanowire (snw)