A Polymorphic Memtransistor with Tunable Metallic and Semiconducting Channel

Yonas Assefa Eshete, Eunji Hwang, Junhyung Kim, Phuong Lien Nguyen, Woo Jong Yu, Bai Sun Kong, Min Seok Jang, Jaekwang Lee, Suyeon Cho, Heejun Yang

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Modulating semiconducting channel potential has been used for electrical switching in transistors without biological plasticity operations that are critical for energy-efficient neuromorphic computing. To achieve efficient data processing, alternative transport mechanisms, such as tunneling and thermionic emission, have been introduced with 2D materials. Here, a polymorphic memtransistor based on atomically thin Mo0.91W0.09Te2 is presented, where the lattice and electronic structures of the lateral device channel can be tuned as either metallic (1T′) or semiconducting (2H) phases by electrical gating. The structural and electronic phase change of the channel material, optimized in Mo0.91W0.09Te2, is explored using transport and optical measurements at the device scale. Based on the phase transition, the polymorphic memtransistor demonstrates a high on/off ratio (up to 105), low subthreshold swing (down to 80 mV dec−1), and various memristive behaviors, which are distinguished from traditional phase-change memory, transistors, and passive memristors for diverse neuromorphic and in-memory computing.

Original languageEnglish
Article number2209089
JournalAdvanced Materials
Volume35
Issue number15
DOIs
StatePublished - 13 Apr 2023

Bibliographical note

Funding Information:
This research was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics, under project no. SRFC‐MA1701‐01 and by National Research Foundation of Korea (NRF) under Grant No. NRF‐2021M3H4A1A03054856. S.C. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIT) (2020K1A3A7A09080370). J. K. and M. S. J. acknowledge the support by the NRF grant funded by MSIT (2022R1A2C2092095). KAIST‐funded Global Singularity Research Program for 2021 (HY).

Publisher Copyright:
© 2023 Wiley-VCH GmbH.

Keywords

  • alloys
  • in-memory computing
  • memtransistors
  • phase transitions
  • polymorphism

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