A Polymorphic Memtransistor with Tunable Metallic and Semiconducting Channel

Yonas Assefa Eshete; Eunji Hwang; Junhyung Kim; Phuong Lien Nguyen; Woo Jong Yu; Bai Sun Kong; Min Seok Jang; Jaekwang Lee; Suyeon Cho; Heejun Yang

doi:10.1002/adma.202209089

A Polymorphic Memtransistor with Tunable Metallic and Semiconducting Channel

Yonas Assefa Eshete, Eunji Hwang, Junhyung Kim, Phuong Lien Nguyen, Woo Jong Yu, Bai Sun Kong, Min Seok Jang, Jaekwang Lee, Suyeon Cho, Heejun Yang

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Modulating semiconducting channel potential has been used for electrical switching in transistors without biological plasticity operations that are critical for energy-efficient neuromorphic computing. To achieve efficient data processing, alternative transport mechanisms, such as tunneling and thermionic emission, have been introduced with 2D materials. Here, a polymorphic memtransistor based on atomically thin Mo_0.91W_0.09Te₂ is presented, where the lattice and electronic structures of the lateral device channel can be tuned as either metallic (1T′) or semiconducting (2H) phases by electrical gating. The structural and electronic phase change of the channel material, optimized in Mo_0.91W_0.09Te₂, is explored using transport and optical measurements at the device scale. Based on the phase transition, the polymorphic memtransistor demonstrates a high on/off ratio (up to 10⁵), low subthreshold swing (down to 80 mV dec⁻¹), and various memristive behaviors, which are distinguished from traditional phase-change memory, transistors, and passive memristors for diverse neuromorphic and in-memory computing.

Original language	English
Article number	2209089
Journal	Advanced Materials
Volume	35
Issue number	15
DOIs	https://doi.org/10.1002/adma.202209089
State	Published - 13 Apr 2023

Bibliographical note

Funding Information:
This research was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics, under project no. SRFC‐MA1701‐01 and by National Research Foundation of Korea (NRF) under Grant No. NRF‐2021M3H4A1A03054856. S.C. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIT) (2020K1A3A7A09080370). J. K. and M. S. J. acknowledge the support by the NRF grant funded by MSIT (2022R1A2C2092095). KAIST‐funded Global Singularity Research Program for 2021 (HY).

Publisher Copyright:
© 2023 Wiley-VCH GmbH.

Keywords

alloys
in-memory computing
memtransistors
phase transitions
polymorphism

Access to Document

10.1002/adma.202209089

Cite this

@article{a0f2c521677648209af82d54ab297855,

title = "A Polymorphic Memtransistor with Tunable Metallic and Semiconducting Channel",

abstract = "Modulating semiconducting channel potential has been used for electrical switching in transistors without biological plasticity operations that are critical for energy-efficient neuromorphic computing. To achieve efficient data processing, alternative transport mechanisms, such as tunneling and thermionic emission, have been introduced with 2D materials. Here, a polymorphic memtransistor based on atomically thin Mo0.91W0.09Te2 is presented, where the lattice and electronic structures of the lateral device channel can be tuned as either metallic (1T′) or semiconducting (2H) phases by electrical gating. The structural and electronic phase change of the channel material, optimized in Mo0.91W0.09Te2, is explored using transport and optical measurements at the device scale. Based on the phase transition, the polymorphic memtransistor demonstrates a high on/off ratio (up to 105), low subthreshold swing (down to 80 mV dec−1), and various memristive behaviors, which are distinguished from traditional phase-change memory, transistors, and passive memristors for diverse neuromorphic and in-memory computing.",

keywords = "alloys, in-memory computing, memtransistors, phase transitions, polymorphism",

author = "Eshete, {Yonas Assefa} and Eunji Hwang and Junhyung Kim and Nguyen, {Phuong Lien} and Yu, {Woo Jong} and Kong, {Bai Sun} and Jang, {Min Seok} and Jaekwang Lee and Suyeon Cho and Heejun Yang",

note = "Funding Information: This research was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics, under project no. SRFC‐MA1701‐01 and by National Research Foundation of Korea (NRF) under Grant No. NRF‐2021M3H4A1A03054856. S.C. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIT) (2020K1A3A7A09080370). J. K. and M. S. J. acknowledge the support by the NRF grant funded by MSIT (2022R1A2C2092095). KAIST‐funded Global Singularity Research Program for 2021 (HY). Publisher Copyright: {\textcopyright} 2023 Wiley-VCH GmbH.",

year = "2023",

month = apr,

day = "13",

doi = "10.1002/adma.202209089",

language = "English",

volume = "35",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "15",

}

TY - JOUR

T1 - A Polymorphic Memtransistor with Tunable Metallic and Semiconducting Channel

AU - Eshete, Yonas Assefa

AU - Hwang, Eunji

AU - Kim, Junhyung

AU - Nguyen, Phuong Lien

AU - Yu, Woo Jong

AU - Kong, Bai Sun

AU - Jang, Min Seok

AU - Lee, Jaekwang

AU - Cho, Suyeon

AU - Yang, Heejun

N1 - Funding Information: This research was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics, under project no. SRFC‐MA1701‐01 and by National Research Foundation of Korea (NRF) under Grant No. NRF‐2021M3H4A1A03054856. S.C. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIT) (2020K1A3A7A09080370). J. K. and M. S. J. acknowledge the support by the NRF grant funded by MSIT (2022R1A2C2092095). KAIST‐funded Global Singularity Research Program for 2021 (HY). Publisher Copyright: © 2023 Wiley-VCH GmbH.

PY - 2023/4/13

Y1 - 2023/4/13

N2 - Modulating semiconducting channel potential has been used for electrical switching in transistors without biological plasticity operations that are critical for energy-efficient neuromorphic computing. To achieve efficient data processing, alternative transport mechanisms, such as tunneling and thermionic emission, have been introduced with 2D materials. Here, a polymorphic memtransistor based on atomically thin Mo0.91W0.09Te2 is presented, where the lattice and electronic structures of the lateral device channel can be tuned as either metallic (1T′) or semiconducting (2H) phases by electrical gating. The structural and electronic phase change of the channel material, optimized in Mo0.91W0.09Te2, is explored using transport and optical measurements at the device scale. Based on the phase transition, the polymorphic memtransistor demonstrates a high on/off ratio (up to 105), low subthreshold swing (down to 80 mV dec−1), and various memristive behaviors, which are distinguished from traditional phase-change memory, transistors, and passive memristors for diverse neuromorphic and in-memory computing.

AB - Modulating semiconducting channel potential has been used for electrical switching in transistors without biological plasticity operations that are critical for energy-efficient neuromorphic computing. To achieve efficient data processing, alternative transport mechanisms, such as tunneling and thermionic emission, have been introduced with 2D materials. Here, a polymorphic memtransistor based on atomically thin Mo0.91W0.09Te2 is presented, where the lattice and electronic structures of the lateral device channel can be tuned as either metallic (1T′) or semiconducting (2H) phases by electrical gating. The structural and electronic phase change of the channel material, optimized in Mo0.91W0.09Te2, is explored using transport and optical measurements at the device scale. Based on the phase transition, the polymorphic memtransistor demonstrates a high on/off ratio (up to 105), low subthreshold swing (down to 80 mV dec−1), and various memristive behaviors, which are distinguished from traditional phase-change memory, transistors, and passive memristors for diverse neuromorphic and in-memory computing.

KW - alloys

KW - in-memory computing

KW - memtransistors

KW - phase transitions

KW - polymorphism

UR - http://www.scopus.com/inward/record.url?scp=85149447762&partnerID=8YFLogxK

U2 - 10.1002/adma.202209089

DO - 10.1002/adma.202209089

M3 - Article

C2 - 36655805

AN - SCOPUS:85149447762

SN - 0935-9648

VL - 35

JO - Advanced Materials

JF - Advanced Materials

IS - 15

M1 - 2209089

ER -

A Polymorphic Memtransistor with Tunable Metallic and Semiconducting Channel

Abstract

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this