@inproceedings{a620c71466b04e3d8f52b0306c984855,
title = "A novel TFT with a laterally engineered bandgap for of 3D logic and flash memory",
abstract = "A dopant segregated Schottky barrier (DSSB) TFT SONOS device is demonstrated for the application of 3D TFT logic devices and flash memory. To apply the DSSB to 3D TFT flash memory, a novel spacer-free structure is successfully implemented. The DSSB TFT SONOS shows a good distribution of programmed VT by one-time programming with high-speed (a V T shift of 2.9 V @ 32 ns) due to the use of a unique local injection of carriers from the DSSB S/D junctions and it is not affected by grain boundaries. Moreover, the program speed is accelerated by reduction of the fin width owing to the enhanced field.",
author = "Choi, {Sung Jin} and Han, {Jin Woo} and Sungho Kim and Moon, {Dong Il} and Moongyu Jang and Choi, {Yang Kyu}",
year = "2010",
doi = "10.1109/VLSIT.2010.5556191",
language = "English",
isbn = "9781424476374",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "111--112",
booktitle = "2010 Symposium on VLSI Technology, VLSIT 2010",
note = "2010 Symposium on VLSI Technology, VLSIT 2010 ; Conference date: 15-06-2010 Through 17-06-2010",
}