A novel sensing scheme for reliable read operation of ultrathin-body vertical nand flash memory devices

Seongjae Cho; Byung Gook Park

doi:10.1109/TED.2011.2157508

A novel sensing scheme for reliable read operation of ultrathin-body vertical nand flash memory devices

Seongjae Cho, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this brief, an advanced sensing scheme for ultrathin-body vertical Flash memory device is introduced experimentally. Without an increment in the number of read operations, the program/erase states of a memory cell can be identified exactly even with the existence of electrical interference between cells having an ultrathin vertical channel in common. The novel sensing scheme, i.e., the double sensing per 2 bits method, was validated for a fabricated device with a channel thickness of 80 nm. The proposed method can be also used as reference for establishing a smart sensing scheme for multilevel cell nand Flash memory devices.

Original language	English
Article number	5934398
Pages (from-to)	2814-2817
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	8
DOIs	https://doi.org/10.1109/TED.2011.2157508
State	Published - Aug 2011

Bibliographical note

Funding Information:
Manuscript received March 2, 2011; revised April 28, 2011; accepted May 14, 2011. Date of publication June 27, 2011; date of current version July 22, 2011. This work was supported by the Ministry of Knowledge Economy of Korea under Project 10035320. The review of this brief was arranged by Editor D. Esseni.

Keywords

Double sensing per 2 bits (DSTB)
electrical interference
multilevel cell (MLC)
nand Flash memory device
ultrathin body

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10.1109/TED.2011.2157508

Cite this

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abstract = "In this brief, an advanced sensing scheme for ultrathin-body vertical Flash memory device is introduced experimentally. Without an increment in the number of read operations, the program/erase states of a memory cell can be identified exactly even with the existence of electrical interference between cells having an ultrathin vertical channel in common. The novel sensing scheme, i.e., the double sensing per 2 bits method, was validated for a fabricated device with a channel thickness of 80 nm. The proposed method can be also used as reference for establishing a smart sensing scheme for multilevel cell nand Flash memory devices.",

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A novel sensing scheme for reliable read operation of ultrathin-body vertical nand flash memory devices

Abstract

Bibliographical note

Keywords

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