A novel sensing circuit for high speed synchronous magneto-resistive RAM

Hyejin Kim, Seungyeon Lee, Seungjun Lee, Hyungsoon Shin, Daejung Kim

Research output: Contribution to journalArticlepeer-review

Abstract

A novel sensing scheme for a magneto-resistive random access memory (MRAM) with a twin cell structure is presented. New sensing circuit has very simple structure while providing stable operation. Voltage-controlled transistor switch limits the voltage across the magnetic tunnel junction (MTJ) under 400 mV while reading. The circuit layout is small enough to fit into 4-cell pitches that high speed synchronous operation is made possible in MRAMs as in DRAMs or SRAMs. We have fully integrated a 256 bit synchronous MRAM operating at 100 MHz with 0.35 um complementary metal oxide semiconductor (CMOS) technology.

Original languageEnglish
Pages (from-to)2226-2229
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
StatePublished - Apr 2004

Keywords

  • High-speed
  • MRAM
  • Nonvolatile memory
  • Sense amplifier
  • Synchronous

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