A novel planarization technique for a high-Tc multilevel IC process

Amit P. Marathe; Theodore Van Duzer; Luke P. Lee

doi:10.1109/77.659435

A novel planarization technique for a high-T_c multilevel IC process

Amit P. Marathe, Theodore Van Duzer, Luke P. Lee

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A novel technique has been developed to planarize insulating layers which may be used in a YBa₂Cu₃O_7-δ (YBCO) IC process. The technique, called complementary mask planarization (CoMP), has been successfully implemented to planarize line gratings etched in an SrTiO₃ insulator. The average surface roughness of the line gratings as measured by an atomic force microscope (AFM) was reduced from 3000 to 250 Å after planarization. Films of YBCO were deposited and patterned in the form of narrow strips over the line gratings to simulate insulated crossovers in IC structures. The I-V characteristics of the YBCO strips over planarized line gratings showed that the critical current density is higher by two orders of magnitude than those over unplanarized gratings.

Original language	English
Pages (from-to)	3834-3839
Number of pages	6
Journal	IEEE Transactions on Applied Superconductivity
Volume	7
Issue number	4
DOIs	https://doi.org/10.1109/77.659435
State	Published - 1997

Bibliographical note

Funding Information:
Manuscript received August 5, 1997. This research was supported by NRL under contract N00014-93-K-2002 and ONR under Contract N00014-92-J-1835.

Keywords

High-temperature superconductors
Integrated circuit fabrication
Planarization
Superconducting circuits

Access to Document

10.1109/77.659435

Cite this

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abstract = "A novel technique has been developed to planarize insulating layers which may be used in a YBa2Cu3O7-δ (YBCO) IC process. The technique, called complementary mask planarization (CoMP), has been successfully implemented to planarize line gratings etched in an SrTiO3 insulator. The average surface roughness of the line gratings as measured by an atomic force microscope (AFM) was reduced from 3000 to 250 {\AA} after planarization. Films of YBCO were deposited and patterned in the form of narrow strips over the line gratings to simulate insulated crossovers in IC structures. The I-V characteristics of the YBCO strips over planarized line gratings showed that the critical current density is higher by two orders of magnitude than those over unplanarized gratings.",

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author = "Marathe, {Amit P.} and {Van Duzer}, Theodore and Lee, {Luke P.}",

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AU - Van Duzer, Theodore

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