A novel one-transistor dynamic random-access memory (1T DRAM) featuring partially inserted wide-bandgap double barriers for high-temperature applications

Myeongsun Kim, Jongmin Ha, Ikhyeon Kwon, Jae Hee Han, Seongjae Cho, Il Hwan Cho

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

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