A novel one-transistor dynamic random-access memory (1T DRAM) featuring partially inserted wide-bandgap double barriers for high-temperature applications

Engineering

• Band Gap 100%
• Band Structure 50%
• Channel Device 50%
• Computer Aided Design 50%
• Current Ratio 50%
• Device Performance 50%
• Drain Voltage 50%
• Dynamic Random Access Memory 100%
• Energy Band 50%
• Erase Operation 50%
• High Temperature Applications 100%
• High Temperature Operations 50%
• Hold State 50%
• Impact Ionization 50%
• Retention Time 50%
• Room Temperature 50%
• Semiconductor Material 50%
• Temperature Condition 50%
• Wide Bandgap Semiconductor 100%

Material Science

• Electronic Band Structure 50%
• Semiconductor Material 50%
• Transistor 100%
• Wide Bandgap Semiconductor 100%