Abstract
Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.
Original language | English |
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Pages (from-to) | 497-503 |
Number of pages | 7 |
Journal | Solid-State Electronics |
Volume | 54 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2010 |
Keywords
- Macro-model
- Magnetic random access memory (MRAM)
- Magnetic-tunnel-junction (MTJ)
- Spin-transfer-torque