Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.
Bibliographical noteFunding Information:
This work was supported by the National Program for Tera-Level Nanodevices of the Ministry of Science and Technology, as a 21st century Frontier Program, and partly by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Advancement (IITA) (IITA-2008-(C1090-0801-0012)).
- Magnetic random access memory (MRAM)
- Magnetic-tunnel-junction (MTJ)