A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements

Seungyeon Lee, Hyunjoo Lee, Sojeong Kim, Seungjun Lee, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.

Original languageEnglish
Pages (from-to)497-503
Number of pages7
JournalSolid-State Electronics
Issue number4
StatePublished - Apr 2010


  • Macro-model
  • Magnetic random access memory (MRAM)
  • Magnetic-tunnel-junction (MTJ)
  • Spin-transfer-torque


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