A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements

Seungyeon Lee; Hyunjoo Lee; Sojeong Kim; Seungjun Lee; Hyungsoon Shin

doi:10.1016/j.sse.2010.01.002

A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements

Seungyeon Lee, Hyunjoo Lee, Sojeong Kim, Seungjun Lee, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.

Original language	English
Pages (from-to)	497-503
Number of pages	7
Journal	Solid-State Electronics
Volume	54
Issue number	4
DOIs	https://doi.org/10.1016/j.sse.2010.01.002
State	Published - Apr 2010

Keywords

Macro-model
Magnetic random access memory (MRAM)
Magnetic-tunnel-junction (MTJ)
Spin-transfer-torque

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10.1016/j.sse.2010.01.002

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title = "A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements",

abstract = "Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.",

keywords = "Macro-model, Magnetic random access memory (MRAM), Magnetic-tunnel-junction (MTJ), Spin-transfer-torque",

author = "Seungyeon Lee and Hyunjoo Lee and Sojeong Kim and Seungjun Lee and Hyungsoon Shin",

note = "Funding Information: This work was supported by the National Program for Tera-Level Nanodevices of the Ministry of Science and Technology, as a 21st century Frontier Program, and partly by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Advancement (IITA) (IITA-2008-(C1090-0801-0012)).",

year = "2010",

month = apr,

doi = "10.1016/j.sse.2010.01.002",

language = "English",

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journal = "Solid-State Electronics",

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T1 - A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements

AU - Lee, Seungyeon

AU - Lee, Hyunjoo

AU - Kim, Sojeong

AU - Lee, Seungjun

AU - Shin, Hyungsoon

N1 - Funding Information: This work was supported by the National Program for Tera-Level Nanodevices of the Ministry of Science and Technology, as a 21st century Frontier Program, and partly by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Advancement (IITA) (IITA-2008-(C1090-0801-0012)).

PY - 2010/4

Y1 - 2010/4

N2 - Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.

AB - Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.

KW - Macro-model

KW - Magnetic random access memory (MRAM)

KW - Magnetic-tunnel-junction (MTJ)

KW - Spin-transfer-torque

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DO - 10.1016/j.sse.2010.01.002

M3 - Article

AN - SCOPUS:77349110681

VL - 54

SP - 497

EP - 503

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 4

ER -

A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements

Abstract

Keywords

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