@inproceedings{784d395713ee4b46bbda09fe744b1af6,
title = "A novel junctionless all-around-gate SONOS device with a quantum nanowire on a bulk substrate for 3D stack NAND flash memory",
abstract = "A novel junctionless all-around-gate (AAG) SONOS device with a homogeneously n+-doped silicon nanowire (SiNW) is demonstrated on a bulk substrate. The diameter and gate length of the quantum-scale SiNW are 4 nm and 20 nm, respectively. A deep RIE process is developed for the formation of the SiNWs. The junctionless AAG SONOS device shows a high read current (> 10 μA), a large VT margin (> 6.5 V), a narrowed distribution of the erased VT, and improved cyclic endurance (105 cycles). Moreover, the proposed process is applied to implement vertically integrated 9-layer single-crystal SiNWs for 3D NAND.",
author = "Choi, \{Sung Jin\} and Moon, \{Dong Il\} and Duarte, \{J. P.\} and Sungho Kim and Choi, \{Yang Kyu\}",
year = "2011",
language = "English",
isbn = "9784863481640",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "74--75",
booktitle = "2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers",
note = "2011 Symposium on VLSI Technology, VLSIT 2011 ; Conference date: 14-06-2011 Through 16-06-2011",
}