A new structural approach for reducing hot carrier generation in deep submicron MOSFETs

Al F. Tasch, Hyungsoon Shin, Christine M. Maziar

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


A major limitation of the lightly-doped-drain (LDD) type of structure at deep submicron (≤0.35 μm) dimensions is studied and a new structural approach for successfully achieving reliable and manufacturable MOSFETs for L≤0.35 μm is described. The newly reported limit on maximum junction depth and allowable grading of the doping profile of the N-region results from the need to avoid channel doping compensation in order to minimize unacceptable adverse charge-sharing effects. The proposed structural approach overcomes this limitation while suppressing adverse hot-carrier effects. The hot-carrier-suppressed (HCS) MOSFET structure has a lower doped N-region behind a very shallow, steeply profiled N+ source/drain junction. This structural approach should permit MOSFET devices to be more successfully scaled at deep submicron dimensions in terms of performance, reliability, and manufacturability combined.

Original languageEnglish
Article number5727459
Pages (from-to)43-44
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1990
Event1990 Symposium on VLSI Technology - Honolulu, HI, United States
Duration: 4 Jun 19907 Jun 1990


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