A new I-V model for surrounding-gate MOSFET considering gate-voltage-dependent quantum effect

J. Kim, W. Sun, H. Shin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We present a new I-V model for a long-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET). SG MOSFET is a strong candidate for next generation nanoscale devices due to a high electrostatic channel control, which in turn substantially reduces the short-channel effect. The new model takes into account quantum mechanical (QM) effects in the SG MOSFET using a double triangular QM well model in the strong inversion regime. In contrast with the old model, we consider the Vg dependence of the QM effect. New model yields excellent agreement with 2-D numerical simulation results for various radii and gate oxide thicknesses of the SG MOSFET.

Original languageEnglish
Pages (from-to)1072-1079
Number of pages8
JournalInternational Journal of Electronics
Volume100
Issue number8
DOIs
StatePublished - 1 Aug 2013

Keywords

  • cylindrical-gate MOSFET
  • modelling
  • quantum effect
  • surrounding-gate MOSFET
  • triangular well
  • V dependence

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