A new hole mobility model for hydrodynamic simulation

Chanho Lee; Jung Sik Kim; Hyungsoon Shin; Young June Park; Hong Shick Min

doi:10.1016/s0026-2714(00)00094-9

A new hole mobility model for hydrodynamic simulation

Chanho Lee, Jung Sik Kim, Hyungsoon Shin, Young June Park, Hong Shick Min

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A new self-consistent hole mobility model that includes the lattice and the hole temperature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicts the saturation of the hole drift velocity and shows the effects of Coulomb scattering, surface phonon scattering, and surface roughness scattering. The model has been incorporated into a device simulation program, SNU-2D. The simulation results have been compared with the reported experimental data and the measured 0.1 μm pMOSFETs, and they are shown to agree quite well. The new model is expected to estimate the characteristics of very short-channel devices in the hydrodynamic model simulations.

Original language	English
Pages (from-to)	2019-2022
Number of pages	4
Journal	Microelectronics Reliability
Volume	40
Issue number	12
DOIs	https://doi.org/10.1016/s0026-2714(00)00094-9
State	Published - Dec 2000

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title = "A new hole mobility model for hydrodynamic simulation",

abstract = "A new self-consistent hole mobility model that includes the lattice and the hole temperature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicts the saturation of the hole drift velocity and shows the effects of Coulomb scattering, surface phonon scattering, and surface roughness scattering. The model has been incorporated into a device simulation program, SNU-2D. The simulation results have been compared with the reported experimental data and the measured 0.1 μm pMOSFETs, and they are shown to agree quite well. The new model is expected to estimate the characteristics of very short-channel devices in the hydrodynamic model simulations.",

author = "Chanho Lee and Kim, {Jung Sik} and Hyungsoon Shin and Park, {Young June} and Min, {Hong Shick}",

year = "2000",

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AU - Lee, Chanho

AU - Kim, Jung Sik

AU - Shin, Hyungsoon

AU - Park, Young June

AU - Min, Hong Shick

PY - 2000/12

Y1 - 2000/12

N2 - A new self-consistent hole mobility model that includes the lattice and the hole temperature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicts the saturation of the hole drift velocity and shows the effects of Coulomb scattering, surface phonon scattering, and surface roughness scattering. The model has been incorporated into a device simulation program, SNU-2D. The simulation results have been compared with the reported experimental data and the measured 0.1 μm pMOSFETs, and they are shown to agree quite well. The new model is expected to estimate the characteristics of very short-channel devices in the hydrodynamic model simulations.

AB - A new self-consistent hole mobility model that includes the lattice and the hole temperature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicts the saturation of the hole drift velocity and shows the effects of Coulomb scattering, surface phonon scattering, and surface roughness scattering. The model has been incorporated into a device simulation program, SNU-2D. The simulation results have been compared with the reported experimental data and the measured 0.1 μm pMOSFETs, and they are shown to agree quite well. The new model is expected to estimate the characteristics of very short-channel devices in the hydrodynamic model simulations.

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VL - 40

SP - 2019

EP - 2022

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 12

ER -

A new hole mobility model for hydrodynamic simulation

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