A new bias scheme for a low power consumption ReRAM crossbar array

Wookyung Sun, Sujin Choi, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


This paper proposes a new bias scheme for a crossbar array that can improve the power consumption and read margin. The concept of the newly proposed 5/12 bias scheme is to reduce the bias of the unselected cells for power consumption and the bias of half-selected cells for a reduced line voltage drop of the selected cell. In the 5/12 bias scheme, the unselected word line and bit line are biased to 5 × V app/12 and 7 × V app/12, respectively. The electrical characteristics of the 5/12 bias scheme are evaluated by HSPICE simulations and it is found that appropriate nonlinearity of selector can simultaneously achieve low power consumption and high read margin for 5/12 bias scheme.

Original languageEnglish
Article number085009
JournalSemiconductor Science and Technology
Issue number8
StatePublished - 15 Jul 2016

Bibliographical note

Publisher Copyright:
© 2016 IOP Publishing Ltd.


  • crossbar array
  • nonvolatile memory
  • power consumption
  • read margin
  • ReRAM


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