Abstract
This paper proposes a new bias scheme for a crossbar array that can improve the power consumption and read margin. The concept of the newly proposed 5/12 bias scheme is to reduce the bias of the unselected cells for power consumption and the bias of half-selected cells for a reduced line voltage drop of the selected cell. In the 5/12 bias scheme, the unselected word line and bit line are biased to 5 × V app/12 and 7 × V app/12, respectively. The electrical characteristics of the 5/12 bias scheme are evaluated by HSPICE simulations and it is found that appropriate nonlinearity of selector can simultaneously achieve low power consumption and high read margin for 5/12 bias scheme.
Original language | English |
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Article number | 085009 |
Journal | Semiconductor Science and Technology |
Volume | 31 |
Issue number | 8 |
DOIs | |
State | Published - 15 Jul 2016 |
Bibliographical note
Publisher Copyright:© 2016 IOP Publishing Ltd.
Keywords
- crossbar array
- nonvolatile memory
- power consumption
- read margin
- ReRAM