A New Approach to Verify and Derive a Transverse-Field-Dependent Mobility Model for Electrons in MOS Inversion Layers

Hyungsoon Shin, Al F. Tasch, Christine M. Maziar, Sanjay K. Banerjee

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

This paper describes a new modeling approach that extracts the functional dependence of carrier mobility on local transverse and longitudinal fields, channel doping, fixed interface charge, and temperature in MOS inversion and accumulation layers directly from the experimentally measured effective (or average) mobility. This approach does not require a priori a detailed knowledge of the experimental variation of mobility within the inversion or accumulation layer, and it can be used to evaluate the validity of other models described in the literature. We also present an improved transverse-field dependent mobility model for electrons in MOS inversion layers that was developed using this new modeling approach. This model has been implemented in the PISCES 2-D device simulation program. Comparisons of the calculated versus measured data show excellent agreement for id-vg and ID-VDcurves for devices with Leff = 0.5-1.2 um.

Original languageEnglish
Pages (from-to)1117-1124
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume36
Issue number6
DOIs
StatePublished - Jun 1989

Fingerprint

Dive into the research topics of 'A New Approach to Verify and Derive a Transverse-Field-Dependent Mobility Model for Electrons in MOS Inversion Layers'. Together they form a unique fingerprint.

Cite this