Abstract
This paper describes a new modeling approach that extracts the functional dependence of carrier mobility on local transverse and longitudinal fields, channel doping, fixed interface charge, and temperature in MOS inversion and accumulation layers directly from the experimentally measured effective (or average) mobility. This approach does not require a priori a detailed knowledge of the experimental variation of mobility within the inversion or accumulation layer, and it can be used to evaluate the validity of other models described in the literature. We also present an improved transverse-field dependent mobility model for electrons in MOS inversion layers that was developed using this new modeling approach. This model has been implemented in the PISCES 2-D device simulation program. Comparisons of the calculated versus measured data show excellent agreement for id-vg and ID-VDcurves for devices with Leff = 0.5-1.2 um.
| Original language | English |
|---|---|
| Pages (from-to) | 1117-1124 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 36 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1989 |
Bibliographical note
Funding Information:Manuscript received October 12, 1988; revised January 29, 1989. This work was supported in part by the Semiconductor Research Corporation. The review of this paper was arranged by Associate Editor K. C. Saraswat. The authors are with the Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712. IEEE Log Number 8927640.