A new 1T DRAM cell: Cone type 1T DRAM cell

Gil Sung Lee, Doo Hyun Kim, Seongjae Cho, Byung Gook Park

Research output: Contribution to journalArticlepeer-review


We propose a new cone-type DRAM cell as a 1T DRAM cell. The superiority of cone shape is already reported, in that the electric field concentration effect encourages impact ionization phenomenon. So the device has improved DRAM characteristics compared with cylinder type 1T DRAM Cell (SGVC Cell). To confirm the memory operation of the cone-type DRAM cell, simulation works were carried out. Also, retention characteristic shows the device can be used practically.

Original languageEnglish
Pages (from-to)681-685
Number of pages5
JournalIEICE Transactions on Electronics
Issue number5
StatePublished - May 2011


  • 1T DRAM
  • Cone
  • Electric field concentration


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