A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Jaeseo Lee; Seong Jun Song; Sung Min Park; Choong Mo Nam; Young Se Kwon; Hoi Jun Yoo

doi:10.1109/ISSCC.2002.992948

A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Jaeseo Lee, Seong Jun Song, Sung Min Park, Choong Mo Nam, Young Se Kwon, Hoi Jun Yoo

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A multichip on oxide (MCO) of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifiers for optical interconnect applications is described. MCO is used to avoid substrate noise coupling between the fully differential CMOS transimpedance amplifier (TIA) and digital logic. Sensitivity, bandwidth and signal to noise ratio of the whole receiver system are determined by the characteristics of the TIA. The measured frequency response with and without planar inductors is shown when a photodiode (PD) of 1 pF parasitic capacitance is connected.

Original language	English
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
DOIs	https://doi.org/10.1109/ISSCC.2002.992948
State	Published - 2002

Access to Document

10.1109/ISSCC.2002.992948

Cite this

@article{28da85a4670241728a35304d36d319a1,

title = "A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications",

abstract = "A multichip on oxide (MCO) of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifiers for optical interconnect applications is described. MCO is used to avoid substrate noise coupling between the fully differential CMOS transimpedance amplifier (TIA) and digital logic. Sensitivity, bandwidth and signal to noise ratio of the whole receiver system are determined by the characteristics of the TIA. The measured frequency response with and without planar inductors is shown when a photodiode (PD) of 1 pF parasitic capacitance is connected.",

author = "Jaeseo Lee and Song, {Seong Jun} and Park, {Sung Min} and Nam, {Choong Mo} and Kwon, {Young Se} and Yoo, {Hoi Jun}",

year = "2002",

doi = "10.1109/ISSCC.2002.992948",

language = "English",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

AU - Lee, Jaeseo

AU - Song, Seong Jun

AU - Park, Sung Min

AU - Nam, Choong Mo

AU - Kwon, Young Se

AU - Yoo, Hoi Jun

PY - 2002

Y1 - 2002

N2 - A multichip on oxide (MCO) of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifiers for optical interconnect applications is described. MCO is used to avoid substrate noise coupling between the fully differential CMOS transimpedance amplifier (TIA) and digital logic. Sensitivity, bandwidth and signal to noise ratio of the whole receiver system are determined by the characteristics of the TIA. The measured frequency response with and without planar inductors is shown when a photodiode (PD) of 1 pF parasitic capacitance is connected.

AB - A multichip on oxide (MCO) of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifiers for optical interconnect applications is described. MCO is used to avoid substrate noise coupling between the fully differential CMOS transimpedance amplifier (TIA) and digital logic. Sensitivity, bandwidth and signal to noise ratio of the whole receiver system are determined by the characteristics of the TIA. The measured frequency response with and without planar inductors is shown when a photodiode (PD) of 1 pF parasitic capacitance is connected.

UR - http://www.scopus.com/inward/record.url?scp=85013324784&partnerID=8YFLogxK

U2 - 10.1109/ISSCC.2002.992948

DO - 10.1109/ISSCC.2002.992948

M3 - Article

AN - SCOPUS:85013324784

SN - 0193-6530

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

ER -

A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Abstract

Access to Document

Fingerprint

Cite this