A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Jaeseo Lee, Seong Jun Song, Sung Min Park, Choong Mo Nam, Young Se Kwon, Hoi Jun Yoo

Research output: Contribution to journalConference articlepeer-review

Abstract

A multichip on oxide (MCO) of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifiers for optical interconnect applications is described. MCO is used to avoid substrate noise coupling between the fully differential CMOS transimpedance amplifier (TIA) and digital logic. Sensitivity, bandwidth and signal to noise ratio of the whole receiver system are determined by the characteristics of the TIA. The measured frequency response with and without planar inductors is shown when a photodiode (PD) of 1 pF parasitic capacitance is connected.

Original languageEnglish
Pages (from-to)80-81+447+67
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
StatePublished - 2002
Event2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States
Duration: 3 Feb 20027 Feb 2002

Fingerprint

Dive into the research topics of 'A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications'. Together they form a unique fingerprint.

Cite this