A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Jaeseo Lee; Seong Jun Song; Sung Min Park; Choong Mo Nam; Young Se Kwon; Hoi Jun Yoo

A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Jaeseo Lee, Seong Jun Song, Sung Min Park, Choong Mo Nam, Young Se Kwon, Hoi Jun Yoo

Electronic and Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A multichip on oxide (MCO) of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifiers for optical interconnect applications is described. MCO is used to avoid substrate noise coupling between the fully differential CMOS transimpedance amplifier (TIA) and digital logic. Sensitivity, bandwidth and signal to noise ratio of the whole receiver system are determined by the characteristics of the TIA. The measured frequency response with and without planar inductors is shown when a photodiode (PD) of 1 pF parasitic capacitance is connected.

Original language	English
Pages (from-to)	80-81+447+67
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
State	Published - 2002
Event	2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States Duration: 3 Feb 2002 → 7 Feb 2002

Cite this

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title = "A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications",

abstract = "A multichip on oxide (MCO) of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifiers for optical interconnect applications is described. MCO is used to avoid substrate noise coupling between the fully differential CMOS transimpedance amplifier (TIA) and digital logic. Sensitivity, bandwidth and signal to noise ratio of the whole receiver system are determined by the characteristics of the TIA. The measured frequency response with and without planar inductors is shown when a photodiode (PD) of 1 pF parasitic capacitance is connected.",

author = "Jaeseo Lee and Song, {Seong Jun} and Park, {Sung Min} and Nam, {Choong Mo} and Kwon, {Young Se} and Yoo, {Hoi Jun}",

year = "2002",

language = "English",

pages = "80--81+447+67",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Solid-State Circuits Conference ; Conference date: 03-02-2002 Through 07-02-2002",

}

TY - JOUR

T1 - A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

AU - Lee, Jaeseo

AU - Song, Seong Jun

AU - Park, Sung Min

AU - Nam, Choong Mo

AU - Kwon, Young Se

AU - Yoo, Hoi Jun

PY - 2002

Y1 - 2002

N2 - A multichip on oxide (MCO) of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifiers for optical interconnect applications is described. MCO is used to avoid substrate noise coupling between the fully differential CMOS transimpedance amplifier (TIA) and digital logic. Sensitivity, bandwidth and signal to noise ratio of the whole receiver system are determined by the characteristics of the TIA. The measured frequency response with and without planar inductors is shown when a photodiode (PD) of 1 pF parasitic capacitance is connected.

AB - A multichip on oxide (MCO) of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifiers for optical interconnect applications is described. MCO is used to avoid substrate noise coupling between the fully differential CMOS transimpedance amplifier (TIA) and digital logic. Sensitivity, bandwidth and signal to noise ratio of the whole receiver system are determined by the characteristics of the TIA. The measured frequency response with and without planar inductors is shown when a photodiode (PD) of 1 pF parasitic capacitance is connected.

UR - http://www.scopus.com/inward/record.url?scp=0036116741&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036116741

SN - 0193-6530

SP - 80-81+447+67

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

T2 - 2002 IEEE International Solid-State Circuits Conference

Y2 - 3 February 2002 through 7 February 2002

ER -

A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Abstract

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