A multichip on oxide 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Jaeseo Lee; Seong Jun Song; Sung Min Park; Choong Mo Nam; Young Se Kwon; Hoi Jun Yoo

A multichip on oxide 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Jaeseo Lee, Seong Jun Song, Sung Min Park, Choong Mo Nam, Young Se Kwon, Hoi Jun Yoo

Electronic and Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A 1.0 Gb/s 80 dBΩ fully-differential TIA uses 0.25 μm CMOS and multichip-on-oxide (MCO) process. MCO enables integration of PD, TIA, and planar inductors of Q=21.1 for shunt peaking on an oxidized silicon substrate. Interchannel crosstalk and power dissipation are <-40 dB and 27 mW, respectively. MCO and TIA chips are 5×5 mm² and 0.7×1 mm²2, respectively.

Original language	English
Pages (from-to)	60-61+401
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Issue number	SUPPL.
State	Published - 2002
Event	2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States Duration: 3 Feb 2002 → 7 Feb 2002

Cite this

@article{cec39cfd61ec4d369a6de36eb761fc7d,

title = "A multichip on oxide 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications",

abstract = "A 1.0 Gb/s 80 dBΩ fully-differential TIA uses 0.25 μm CMOS and multichip-on-oxide (MCO) process. MCO enables integration of PD, TIA, and planar inductors of Q=21.1 for shunt peaking on an oxidized silicon substrate. Interchannel crosstalk and power dissipation are <-40 dB and 27 mW, respectively. MCO and TIA chips are 5×5 mm2 and 0.7×1 mm22, respectively.",

author = "Jaeseo Lee and Song, {Seong Jun} and Park, {Sung Min} and Nam, {Choong Mo} and Kwon, {Young Se} and Yoo, {Hoi Jun}",

year = "2002",

language = "English",

pages = "60--61+401",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "SUPPL.",

note = "2002 IEEE International Solid-State Circuits Conference ; Conference date: 03-02-2002 Through 07-02-2002",

}

A multichip on oxide 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications. / Lee, Jaeseo; Song, Seong Jun; Park, Sung Min et al.
In: Digest of Technical Papers - IEEE International Solid-State Circuits Conference, No. SUPPL., 2002, p. 60-61+401.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - A multichip on oxide 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

AU - Lee, Jaeseo

AU - Song, Seong Jun

AU - Park, Sung Min

AU - Nam, Choong Mo

AU - Kwon, Young Se

AU - Yoo, Hoi Jun

PY - 2002

Y1 - 2002

N2 - A 1.0 Gb/s 80 dBΩ fully-differential TIA uses 0.25 μm CMOS and multichip-on-oxide (MCO) process. MCO enables integration of PD, TIA, and planar inductors of Q=21.1 for shunt peaking on an oxidized silicon substrate. Interchannel crosstalk and power dissipation are <-40 dB and 27 mW, respectively. MCO and TIA chips are 5×5 mm2 and 0.7×1 mm22, respectively.

AB - A 1.0 Gb/s 80 dBΩ fully-differential TIA uses 0.25 μm CMOS and multichip-on-oxide (MCO) process. MCO enables integration of PD, TIA, and planar inductors of Q=21.1 for shunt peaking on an oxidized silicon substrate. Interchannel crosstalk and power dissipation are <-40 dB and 27 mW, respectively. MCO and TIA chips are 5×5 mm2 and 0.7×1 mm22, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0036228415&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036228415

SN - 0193-6530

SP - 60-61+401

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

IS - SUPPL.

T2 - 2002 IEEE International Solid-State Circuits Conference

Y2 - 3 February 2002 through 7 February 2002

ER -

A multichip on oxide 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Abstract

Fingerprint

Cite this