A multichip on oxide 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Jaeseo Lee, Seong Jun Song, Sung Min Park, Choong Mo Nam, Young Se Kwon, Hoi Jun Yoo

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

A 1.0 Gb/s 80 dBΩ fully-differential TIA uses 0.25 μm CMOS and multichip-on-oxide (MCO) process. MCO enables integration of PD, TIA, and planar inductors of Q=21.1 for shunt peaking on an oxidized silicon substrate. Interchannel crosstalk and power dissipation are <-40 dB and 27 mW, respectively. MCO and TIA chips are 5×5 mm2 and 0.7×1 mm22, respectively.

Original languageEnglish
Pages (from-to)60-61+401
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Issue numberSUPPL.
StatePublished - 2002
Event2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States
Duration: 3 Feb 20027 Feb 2002

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