A low-power wideband transimpedance amplifier in 0.13μm CMOS

Jiyoung Tak, Hyewon Kim, Jihye Shin, Jinju Lee, Jungwon Han, Sung Min Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

This paper presents a low-power wideband transimpedance amplifier (TIA) for the applications of multi-band wireless communication systems. Realized in a standard 0.13μm CMOS technology, the measured results of the TIA demonstrate the maximum gain of 16dB in the frequency range of 800MHz∼4.3GHz, the noise figure of < 5.88dB, the input-referred third order intercept point (IIP3) of -5.4dBm at 2.4GHz, and the power consumption of 12mW from a single 1.2V supply. The chip occupies the total area of 0.7×1.1mm2.

Original languageEnglish
Title of host publication2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals, IMWS-IRFPT 2011
DOIs
StatePublished - 2011
Event2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals, IMWS-IRFPT 2011 - Daejeon, Korea, Republic of
Duration: 24 Aug 201125 Aug 2011

Publication series

Name2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals, IMWS-IRFPT 2011

Conference

Conference2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals, IMWS-IRFPT 2011
Country/TerritoryKorea, Republic of
CityDaejeon
Period24/08/1125/08/11

Keywords

  • CMOS
  • input matching
  • multi-band
  • transimpedance amplifier
  • wideband

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