Abstract
This paper presents a low-power, gigabit limiting amplifier (LA) for application to optical receivers that employ the negative impedance compensation technique not only to enhance the gain and bandwidth characteristics simultaneously, but also to allow low-voltage, low-power operations. Test chips of the LA were implemented in a standard 0.18-μ m CMOS process, demonstrating 2.5-Gb/s operation with 40-dB gain, 0.053-UI rms jitter for 2 31-1 pseudorandom bit sequence inputs, 9.5-mV pp input sensitivity for 10 - 12 bit error rate (BER), and 5.2-mW power dissipation from a single 1.2-V supply. The chip core occupies the area of only 0.25 × 0.1 mm 2. The proposed LA was adopted to realize a low-power, gigabit optical receiver. Fabricated using the same 0.18-μm CMOS technology, the measured results of the optical receiver chip reveal 132.6-dB Ω transimpedance gain, 2.7-GHz bandwidth even with a large 1.5-pF input parasitic capacitance, -16-dBm optical sensitivity for 10 -12 BER, and 51-mW power dissipation from a single 1.8-V supply. The area of the whole chip is 1.75 × 0.45 mm 2.
Original language | English |
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Article number | 5712198 |
Pages (from-to) | 393-399 |
Number of pages | 7 |
Journal | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
Volume | 20 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2012 |
Bibliographical note
Funding Information:Manuscript received August 21, 2010; revised November 25, 2010; accepted December 21, 2010. Date of publication February 14, 2011; date of current version February 17, 2012. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology under Contract 20100001557.
Keywords
- CMOS
- DC-balanced transimpedance amplifier
- limiting amplifier
- negative impedance compensation
- optical receivers