A high aspect ratio 2D gimbaled microscanner with large static rotation

Sunghoon Kwon; V. Milanović; L. P. Lee

doi:10.1109/OMEMS.2002.1031486

A high aspect ratio 2D gimbaled microscanner with large static rotation

Sunghoon Kwon, V. Milanović, L. P. Lee

Department of Chemistry & Nanoscience

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

Introduces an isolation method for SOI MEMS technologies, and demonstrates a high aspect ratio 2D gimbaled microscanner with large static rotation using the method. The proposed isolation method, termed backside island process, provides electrical isolation and mechanical coupling of SOI structures through deep reactive ion etching of the backside substrate. The fabricated 2D mirrors perform large static optical deflection from -20.3° to 15.6° by outer gimbal and from 0° to -11.9° by inner mirror.

Original language	English
Title of host publication	2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	149-150
Number of pages	2
ISBN (Electronic)	0780375955, 9780780375956
DOIs	https://doi.org/10.1109/OMEMS.2002.1031486
State	Published - 2002
Event	IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Lugano, Switzerland Duration: 20 Aug 2002 → 23 Aug 2002

Publication series

Name	2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest

Conference

Conference	IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002
Country/Territory	Switzerland
City	Lugano
Period	20/08/02 → 23/08/02

Bibliographical note

Publisher Copyright:
© 2002 IEEE.

Access to Document

10.1109/OMEMS.2002.1031486

Cite this

Kwon, S., Milanović, V., & Lee, L. P. (2002). A high aspect ratio 2D gimbaled microscanner with large static rotation. In 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest (pp. 149-150). Article 1031486 (2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/OMEMS.2002.1031486

Kwon, Sunghoon ; Milanović, V. ; Lee, L. P. / A high aspect ratio 2D gimbaled microscanner with large static rotation. 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 149-150 (2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest).

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title = "A high aspect ratio 2D gimbaled microscanner with large static rotation",

abstract = "Introduces an isolation method for SOI MEMS technologies, and demonstrates a high aspect ratio 2D gimbaled microscanner with large static rotation using the method. The proposed isolation method, termed backside island process, provides electrical isolation and mechanical coupling of SOI structures through deep reactive ion etching of the backside substrate. The fabricated 2D mirrors perform large static optical deflection from -20.3° to 15.6° by outer gimbal and from 0° to -11.9° by inner mirror.",

author = "Sunghoon Kwon and V. Milanovi{\'c} and Lee, {L. P.}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

year = "2002",

doi = "10.1109/OMEMS.2002.1031486",

language = "English",

series = "2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest",

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Kwon, S, Milanović, V & Lee, LP 2002, A high aspect ratio 2D gimbaled microscanner with large static rotation. in 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest., 1031486, 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest, Institute of Electrical and Electronics Engineers Inc., pp. 149-150, IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002, Lugano, Switzerland, 20/08/02. https://doi.org/10.1109/OMEMS.2002.1031486

A high aspect ratio 2D gimbaled microscanner with large static rotation. / Kwon, Sunghoon; Milanović, V.; Lee, L. P.
2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2002. p. 149-150 1031486 (2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Introduces an isolation method for SOI MEMS technologies, and demonstrates a high aspect ratio 2D gimbaled microscanner with large static rotation using the method. The proposed isolation method, termed backside island process, provides electrical isolation and mechanical coupling of SOI structures through deep reactive ion etching of the backside substrate. The fabricated 2D mirrors perform large static optical deflection from -20.3° to 15.6° by outer gimbal and from 0° to -11.9° by inner mirror.

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BT - 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest

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Kwon S, Milanović V, Lee LP. A high aspect ratio 2D gimbaled microscanner with large static rotation. In 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest. Institute of Electrical and Electronics Engineers Inc. 2002. p. 149-150. 1031486. (2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest). doi: 10.1109/OMEMS.2002.1031486

A high aspect ratio 2D gimbaled microscanner with large static rotation

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