A full adder design using serially connected single-layer magnetic tunnel junction elements

Seungyeon Lee, Sunae Seo, Seungjun Lee, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Magnetic tunnel junction (MTJ) elements based magnetologic promises many advantages over conventional CMOS logic devices. MTJ elements can be configured by simple circuitry to compute various Boolean functions and store the results. Advantages of magnetologic include low power consumption, the possibility of high-speed operation, and high density. We have proposed a novel magnetologic structure comprising a single-layer MTJ and a current driver, which requires fewer processing steps and provides enhanced functional flexibility and uniformity. Here, we expand the computational capabilities of single-layer MTJs, using series connections. An algorithm that realizes complex Boolean functions with fewer magnetologic elements than previous papers is presented.

Original languageEnglish
Pages (from-to)890-895
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - Mar 2008

Bibliographical note

Funding Information:
Manuscript received August 3, 2007; revised November 19, 2007. This work was supported in part by the Ministry of Science and Technology under the 21st Century Frontier National Program for Tera-Level Nanodevices and in part by the Ministry of Information and Communication, Korea, under Grant IITA-2008-C109008010030 of the Information Technology Research Center Support Program supervised by the Institute of Information Technology Advancement.The review of this paper was arranged by Editor H. Jaouen.


  • Magnetic tunnel junction
  • Magnetoresistive devices
  • Nonvolatile logic device


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