Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices.
Bibliographical noteFunding Information:
This work was supported by the Leading Foreign Research Institute Recruitment Program (0409-20100156), the NSI-NCRC (0543-20090091477) of NRF and the FPRD of BK21, through the Ministry of Education, Science and Technology (MEST), Korea. Partial support for Y.W.P. was provided by the Brothers Jacob and Marcus Wallenberg Memory Foundation grant administered by the Royal Swedish Academy of Sciences (KVA), Sweden. S.W.L. was supported by the NRF (2008-331-C00099). The WCU program of the MEST (R31-2008-000-10057-0) and Korea-Swedish research cooperation program (STINT and NRF) supported S.W.L. and E.E.B.C. The authors thank H.S. Kim for his help in the sample preparation for the speed measurements.