A Compressed Page Management Scheme for NAND-type Flash Memory

Keun Soo Yim; Kern Koh; Hyokyung Bahn

A Compressed Page Management Scheme for NAND-type Flash Memory

Keun Soo Yim, Kern Koh, Hyokyung Bahn

Department of Computer Science & Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Compressed data management in NAND-type flash memory is difficult because it only supports page I/O. For example, when the size of compressed data is smaller than page size, internal fragmentation occurs, and this degrades the effectiveness of compression seriously. To reduce internal fragmentation, the compression unit should be sufficiently large. However, larger compression unit induces longer read and write latencies for random accessing. We, therefore, present a novel compressed page management scheme that stores several small compressed pages to one physical page by using a write buffer. Simulation results show that our proposed scheme can significantly expand storage capacity without having to delay read and write latencies.

Original language	English
Title of host publication	Proceedings of the International Conference on VLSI, VLSI 03
Editors	H.R. Arbania, L.T. Yang
Pages	266-271
Number of pages	6
State	Published - 2003
Event	Proceedings of the International Conference on VLSI, VLSI'03 - Las Vegas, NV, United States Duration: 23 Jun 2003 → 26 Jun 2003

Publication series

Name	Proceedings of the International Conference on VLSI

Conference

Conference	Proceedings of the International Conference on VLSI, VLSI'03
Country/Territory	United States
City	Las Vegas, NV
Period	23/06/03 → 26/06/03

Keywords

Data compression
Flash memory
Latency reduction

Cite this

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title = "A Compressed Page Management Scheme for NAND-type Flash Memory",

abstract = "Compressed data management in NAND-type flash memory is difficult because it only supports page I/O. For example, when the size of compressed data is smaller than page size, internal fragmentation occurs, and this degrades the effectiveness of compression seriously. To reduce internal fragmentation, the compression unit should be sufficiently large. However, larger compression unit induces longer read and write latencies for random accessing. We, therefore, present a novel compressed page management scheme that stores several small compressed pages to one physical page by using a write buffer. Simulation results show that our proposed scheme can significantly expand storage capacity without having to delay read and write latencies.",

keywords = "Data compression, Flash memory, Latency reduction",

author = "Yim, {Keun Soo} and Kern Koh and Hyokyung Bahn",

year = "2003",

language = "English",

isbn = "1932415106",

series = "Proceedings of the International Conference on VLSI",

pages = "266--271",

editor = "H.R. Arbania and L.T. Yang",

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note = "Proceedings of the International Conference on VLSI, VLSI'03 ; Conference date: 23-06-2003 Through 26-06-2003",

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A Compressed Page Management Scheme for NAND-type Flash Memory. / Yim, Keun Soo; Koh, Kern; Bahn, Hyokyung.
Proceedings of the International Conference on VLSI, VLSI 03. ed. / H.R. Arbania; L.T. Yang. 2003. p. 266-271 (Proceedings of the International Conference on VLSI).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Koh, Kern

AU - Bahn, Hyokyung

PY - 2003

Y1 - 2003

N2 - Compressed data management in NAND-type flash memory is difficult because it only supports page I/O. For example, when the size of compressed data is smaller than page size, internal fragmentation occurs, and this degrades the effectiveness of compression seriously. To reduce internal fragmentation, the compression unit should be sufficiently large. However, larger compression unit induces longer read and write latencies for random accessing. We, therefore, present a novel compressed page management scheme that stores several small compressed pages to one physical page by using a write buffer. Simulation results show that our proposed scheme can significantly expand storage capacity without having to delay read and write latencies.

AB - Compressed data management in NAND-type flash memory is difficult because it only supports page I/O. For example, when the size of compressed data is smaller than page size, internal fragmentation occurs, and this degrades the effectiveness of compression seriously. To reduce internal fragmentation, the compression unit should be sufficiently large. However, larger compression unit induces longer read and write latencies for random accessing. We, therefore, present a novel compressed page management scheme that stores several small compressed pages to one physical page by using a write buffer. Simulation results show that our proposed scheme can significantly expand storage capacity without having to delay read and write latencies.

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KW - Flash memory

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M3 - Conference contribution

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BT - Proceedings of the International Conference on VLSI, VLSI 03

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A Compressed Page Management Scheme for NAND-type Flash Memory

Abstract

Publication series

Conference

Keywords

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