A Comprehensive Study of the Resistive Switching Mechanism in -Structured RRAM

Sungho Kim, Yang-Kyu Choi

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3049-3054
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	12
State	Published - 2009

Cite this

@article{215c34f5a6ba4a1486fe156aa248a13c,

title = "A Comprehensive Study of the Resistive Switching Mechanism in -Structured RRAM",

author = "Sungho Kim and Yang-Kyu Choi",

year = "2009",

language = "English",

volume = "56",

pages = "3049--3054",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}