A comprehensive study of the resistive switching mechanism in Al/TiO x/TiO 2/Al-structured RRAM

Sungho Kim; Yang Kyu Choi

doi:10.1109/TED.2009.2032597

A comprehensive study of the resistive switching mechanism in Al/TiO _x/TiO ₂/Al-structured RRAM

Sungho Kim, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

The conduction mechanism and resistive switching properties in a resistive-random-access-memory device composed of Al(top)/TiO _x/TiO ₂/Al(bottom) are investigated in this paper. The active-top-electrode (TE) material aluminum interacted with the TiO ₂ layer and induced an oxygen-deficient TiOx layer near the TE. The naturally formed oxygen-deficient TiOx layer was confirmed by a transmission-electron- microscope energydispersive X-ray spectrometry analysis. The oxygen-deficient TiOx region acted as a trap for electrons and contributed to the resistive switching. The proposed mechanism and measured data are verified through simulation of a two-variable resistor model.

Original language	English
Article number	5306148
Pages (from-to)	3049-3054
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	12
DOIs	https://doi.org/10.1109/TED.2009.2032597
State	Published - Dec 2009

Keywords

Oxygen vacancy
Resistive random access memory (RRAM)
Resistive switching
TiO

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10.1109/TED.2009.2032597

Cite this

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title = "A comprehensive study of the resistive switching mechanism in Al/TiO x/TiO 2/Al-structured RRAM",

abstract = "The conduction mechanism and resistive switching properties in a resistive-random-access-memory device composed of Al(top)/TiO x/TiO 2/Al(bottom) are investigated in this paper. The active-top-electrode (TE) material aluminum interacted with the TiO 2 layer and induced an oxygen-deficient TiOx layer near the TE. The naturally formed oxygen-deficient TiOx layer was confirmed by a transmission-electron- microscope energydispersive X-ray spectrometry analysis. The oxygen-deficient TiOx region acted as a trap for electrons and contributed to the resistive switching. The proposed mechanism and measured data are verified through simulation of a two-variable resistor model.",

keywords = "Oxygen vacancy, Resistive random access memory (RRAM), Resistive switching, TiO",

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T1 - A comprehensive study of the resistive switching mechanism in Al/TiO x/TiO 2/Al-structured RRAM

AU - Kim, Sungho

AU - Choi, Yang Kyu

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N2 - The conduction mechanism and resistive switching properties in a resistive-random-access-memory device composed of Al(top)/TiO x/TiO 2/Al(bottom) are investigated in this paper. The active-top-electrode (TE) material aluminum interacted with the TiO 2 layer and induced an oxygen-deficient TiOx layer near the TE. The naturally formed oxygen-deficient TiOx layer was confirmed by a transmission-electron- microscope energydispersive X-ray spectrometry analysis. The oxygen-deficient TiOx region acted as a trap for electrons and contributed to the resistive switching. The proposed mechanism and measured data are verified through simulation of a two-variable resistor model.

AB - The conduction mechanism and resistive switching properties in a resistive-random-access-memory device composed of Al(top)/TiO x/TiO 2/Al(bottom) are investigated in this paper. The active-top-electrode (TE) material aluminum interacted with the TiO 2 layer and induced an oxygen-deficient TiOx layer near the TE. The naturally formed oxygen-deficient TiOx layer was confirmed by a transmission-electron- microscope energydispersive X-ray spectrometry analysis. The oxygen-deficient TiOx region acted as a trap for electrons and contributed to the resistive switching. The proposed mechanism and measured data are verified through simulation of a two-variable resistor model.

KW - Oxygen vacancy

KW - Resistive random access memory (RRAM)

KW - Resistive switching

KW - TiO

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